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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 19 — Sep. 14, 2009
  • pp: 16739–16744

An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K

Yuhsuke Yasutake, Jun Igarashi, Norishige Tana-ami, and Susumu Fukatsu  »View Author Affiliations

Optics Express, Vol. 17, Issue 19, pp. 16739-16744 (2009)

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A new class of silicon-based light-emitting diode is demonstrated using InSb-quantum-dot-embedded Si containing the emissive {311} rod-like defects (RLDs). A narrow peak centered at 1377 nm (900 meV) characteristic of the {311} RLDs was found to develop out of an otherwise broad background electroluminescence (EL) upon the application of electric fields in the growth direction. Such electric-field-active EL was observed up to 150 K with a slight downward shift of the peak energies, accompanied by an anomaly in the thermal roll-off of the EL intensity. Spectral variations with temperature and electric field indicate a switching of dominance between the closely correlated defect states that are responsible for the EL emission.

© 2009 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: June 24, 2009
Revised Manuscript: July 30, 2009
Manuscript Accepted: August 26, 2009
Published: September 4, 2009

Yuhsuke Yasutake, Jun Igarashi, Norishige Tana-ami, and Susumu Fukatsu, "An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K," Opt. Express 17, 16739-16744 (2009)

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