OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 20 — Sep. 28, 2009
  • pp: 17227–17233

Strong green photoluminescence from In x Ga1- x N/GaN nanorod arrays

Chi-Chang Hong, Hyeyoung Ahn, Chen-Ying Wu, and Shangjr Gwo  »View Author Affiliations


Optics Express, Vol. 17, Issue 20, pp. 17227-17233 (2009)
http://dx.doi.org/10.1364/OE.17.017227


View Full Text Article

Enhanced HTML    Acrobat PDF (539 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In x Ga1- x N) nanorod arrays. The formation of In x Ga1- x N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In x Ga1- x N nanorods is due to the transfer of excitons to the localized states before the radiative decay.

© 2009 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(160.4236) Materials : Nanomaterials

ToC Category:
Materials

History
Original Manuscript: May 12, 2009
Revised Manuscript: August 2, 2009
Manuscript Accepted: August 3, 2009
Published: September 14, 2009

Citation
Chi-Chang Hong, Hyeyoung Ahn, Chen-Ying Wu, and Shangjr Gwo, "Strong green photoluminescence from
InxGa1-xN/GaN nanorod arrays," Opt. Express 17, 17227-17233 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-20-17227


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. H. Morkoç and S. N. Mohammad, “High-luminosity blue and blue-green gallium nitride light-emitting diodes,” Science 267(5194), 51–55 (1995). [CrossRef] [PubMed]
  2. F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature 386(6623), 351–359 (1997). [CrossRef]
  3. S. Nakamura, and G. Fasol, The Blue Laser Diode (Springer, New York, 1997).
  4. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys. 36(Part 2, No. 4B), L459–L462 (1997). [CrossRef]
  5. E. Calleja, M. A. Sánchez-García, F. J. Sánchez, F. Calle, F. B. Naranjo, E. Muñoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000). [CrossRef]
  6. Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, and J. E. Oh, “Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy,” Appl. Phys. Lett. 85(23), 5718 (2004). [CrossRef]
  7. H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004). [CrossRef]
  8. C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
  9. Y. Kawakami, S. Suzuki, A. Kaneta, M. Funato, A. Kikuchi, and K. Kishino, “Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns,” Appl. Phys. Lett. 89(16), 163124 (2006). [CrossRef]
  10. H.-Y. Chen, H.-W. Lin, C.-H. Shen, and S. Gwo, “Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si (111) by plasma-assisted molecular-beam epitaxy,” Appl. Phys. Lett. 89(24), 243105 (2006). [CrossRef]
  11. H.-S. Chen, D.-M. Yeh, Y.-C. Lu, C.-Y. Chen, C.-F. Huang, T.-Y. Tang, C. C. Yang, C.-S. Wu, and C.-D. Chen, “Strain relaxation and quantum confinement in InGaN/GaN nanoposts,” Nanotechnology 17(5), 1454–1458 (2006). [CrossRef]
  12. H.-Y. Chen, H.-W. Lin, C.-Y. Wu, W.-C. Chen, J.-S. Chen, and S. Gwo, “Gallium nitride nanorod arrays as low-refractive-index transparent media in the entire visible spectral region,” Opt. Express 16(11), 8106–8116 (2008). [CrossRef] [PubMed]
  13. S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu, “Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature,” Appl. Phys. Lett. 84(19), 3765 (2004). [CrossRef]
  14. A. R. Denton and N. W. Ashcroft, “Vegard’s law,” Phys. Rev. A 43(6), 3161–3164 (1991). [CrossRef] [PubMed]
  15. P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire,” J. Electron. Mater. 29(3), 332–341 (2000). [CrossRef]
  16. Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, “S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370 (1998). [CrossRef]
  17. H.-S. Chang, T.-M. Hsu, T.-F. Chuang, W.-Y. Chen, S. Gwo, and C.-H. Shen, “Localized states in InxGa1-xN epitaxial film,” Solid State Commun. 149(1-2), 18–20 (2009). [CrossRef]
  18. S. Nakamura, and S. F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes (Taylor & Francis, 2000), Chap. 5.
  19. R. C. Miller, D. A. Kleinman, W. A. Nordland, and A. C. Gossard, “Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1-xAs multilayer structures,” Phys. Rev. B 22(2), 863–871 (1980). [CrossRef]
  20. R. J. Archer, “Materials for light emitting diodes,” J. Electron. Mater. 1(1), 127–153 (1972). [CrossRef]
  21. Y. Narukawa, Y. Kawakami, and S. Fujita, “Dimensionality of excitons in laser-diode structures composed of InxGa1-xN multiple quantum wells,” Phys. Rev. B 59(15), 10283–10288 (1999). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4 Fig. 5
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited