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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 20 — Sep. 28, 2009
  • pp: 17227–17233

Strong green photoluminescence from In x Ga1- x N/GaN nanorod arrays

Chi-Chang Hong, Hyeyoung Ahn, Chen-Ying Wu, and Shangjr Gwo  »View Author Affiliations

Optics Express, Vol. 17, Issue 20, pp. 17227-17233 (2009)

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We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In x Ga1- x N) nanorod arrays. The formation of In x Ga1- x N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In x Ga1- x N nanorods is due to the transfer of excitons to the localized states before the radiative decay.

© 2009 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: May 12, 2009
Revised Manuscript: August 2, 2009
Manuscript Accepted: August 3, 2009
Published: September 14, 2009

Chi-Chang Hong, Hyeyoung Ahn, Chen-Ying Wu, and Shangjr Gwo, "Strong green photoluminescence from
InxGa1-xN/GaN nanorod arrays," Opt. Express 17, 17227-17233 (2009)

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