Semiconductor disk laser pumped Cr<sup>2+</sup>:Znse  lasers

doi:10.1364/OE.17.018136

Semiconductor disk laser pumped Cr²⁺:Znse  lasers

Nils Hempler, John-Mark Hopkins, Benno Rösener, Marcel Rattunde, Joachim Wagner, Vladimir V. Fedorov, Igor S. Moskalev, Sergey B. Mirov, and David Burns »View Author Affiliations

Optics Express, Vol. 17, Issue 20, pp. 18136-18141 (2009)
http://dx.doi.org/10.1364/OE.17.018136

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Abstract

A new flexible pump source, the optically-pumped semiconductor disk laser (SDL), for the Cr²⁺:ZnSe laser is reported. The SDL provides up to 6W output power at a free running central wavelength of 1.98μm. The Cr²⁺:ZnSe laser operated at an output power of 1.8W and a slope efficiency of ~50% with respect to absorbed pump power whilst maintaining a low output intensity noise figure of <0.14% RMS. The system required no optical isolation even under the situation of significant optical feedback.

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: July 7, 2009
Revised Manuscript: September 16, 2009
Manuscript Accepted: September 17, 2009
Published: September 24, 2009

Citation
Nils Hempler, John-Mark Hopkins, Benno Rösener, Marcel Rattunde, Joachim Wagner, Vladimir V. Fedorov, Igor S. Moskalev, Sergey B. Mirov, and David Burns, "Semiconductor disk laser pumped Cr²⁺:Znse  lasers," Opt. Express 17, 18136-18141 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-20-18136

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References

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).
U. Demirbas and A. Sennaroglu, “Intracavity-pumped Cr2+: ZnSe laser with ultrabroad tuning range between 1880 and 3100 nm,” Opt. Lett. 31(15), 2293–2295 (2006). [PubMed]
R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).
I. T. Sorokina, and E. Sorokin, “Chirped-Mirror Dispersion Controlled Femtosecond Cr:ZnSe Laser,” Advanced Solid-State Photonics, 2007.
S. B. Mirov, V. V. Fedorov, I. S. Moskalev, D. V. Martyshkin and C. Kim, “Progress in Cr2+ and Fe2+ dopded Mid-IR Laser Materials,” Laser Photonics Rev., DOI 10.1002/Ipor.200810076, 2009.
I. T. Sorokina, E. Sorokin, S. Mirov, V. Fedorov, V. Badikov, V. Panyutin, and K. I. Schaffers, “Broadly tunable compact continuous-wave Cr2+: ZnS laser,” Opt. Lett. 27(12), 1040–1042 (2002).
M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, “1.9µm and 2.0µm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe,” Opt. Lett. 27(12), 1034–1036 (2002).
I. T. Sorokina, E. Sorokin, A. Di Lieto, M. Tonelli, R. H. Page, and K. I. Schaffers, “Efficient broadly tunable continuous-wave Cr2+: ZnSe laser,” J. Opt. Soc. Am. B 18(7), 926–930 (2001).
M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).
N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev., DIO 10.1002, 2009.
G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, “Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers,” J. Lightwave Technol. 26(8), 952–961 (2008).
J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008). [PubMed]
Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).
J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).
A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).
L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).
N. Hempler, J. M. Hopkins, and M. Rattunde, “Tuning and brightness optimisation of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm,” European Conference on Lasers and Electro-Optics, CB7.3, 2009.
D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).
J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).
P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

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[1] L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

[2] U. Demirbas and A. Sennaroglu, “Intracavity-pumped Cr2+: ZnSe laser with ultrabroad tuning range between 1880 and 3100 nm,” Opt. Lett. 31(15), 2293–2295 (2006). [PubMed]

[3] R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

[4] I. T. Sorokina, and E. Sorokin, “Chirped-Mirror Dispersion Controlled Femtosecond Cr:ZnSe Laser,” Advanced Solid-State Photonics, 2007.

[5] S. B. Mirov, V. V. Fedorov, I. S. Moskalev, D. V. Martyshkin and C. Kim, “Progress in Cr2+ and Fe2+ dopded Mid-IR Laser Materials,” Laser Photonics Rev., DOI 10.1002/Ipor.200810076, 2009.

[6] I. T. Sorokina, E. Sorokin, S. Mirov, V. Fedorov, V. Badikov, V. Panyutin, and K. I. Schaffers, “Broadly tunable compact continuous-wave Cr2+: ZnS laser,” Opt. Lett. 27(12), 1040–1042 (2002).

[7] M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, “1.9µm and 2.0µm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe,” Opt. Lett. 27(12), 1034–1036 (2002).

[8] I. T. Sorokina, E. Sorokin, A. Di Lieto, M. Tonelli, R. H. Page, and K. I. Schaffers, “Efficient broadly tunable continuous-wave Cr2+: ZnSe laser,” J. Opt. Soc. Am. B 18(7), 926–930 (2001).

[9] M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

[10] N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

[11] S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev., DIO 10.1002, 2009.

[12] G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, “Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers,” J. Lightwave Technol. 26(8), 952–961 (2008).

[13] J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008). [PubMed]

[14] Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).

[15] J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

[16] J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

[17] A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

[18] L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

[19] N. Hempler, J. M. Hopkins, and M. Rattunde, “Tuning and brightness optimisation of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm,” European Conference on Lasers and Electro-Optics, CB7.3, 2009.

[20] D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).

[21] J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

[22] P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

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Semiconductor disk laser pumped Cr²⁺:Znse  lasers