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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 21 — Oct. 12, 2009
  • pp: 18571–18580

Optical modulation in silicon waveguides via charge state control of deep levels

D F Logan, P E Jessop, A P Knights, G Wojcik, and A Goebel  »View Author Affiliations

Optics Express, Vol. 17, Issue 21, pp. 18571-18580 (2009)

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The control of defect mediated optical absorption at a wavelength of 1550nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A ‘normally-off’ depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

© 2009 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(250.4110) Optoelectronics : Modulators

ToC Category:
Optical Devices

Original Manuscript: July 29, 2009
Revised Manuscript: September 23, 2009
Manuscript Accepted: September 25, 2009
Published: September 30, 2009

D F Logan, P E Jessop, A P Knights, G Wojcik, and A Goebel, "Optical modulation in silicon waveguides via charge state control of deep levels," Opt. Express 17, 18571-18580 (2009)

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