Abstract

By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of ~40 μs were successively generated at a repetition rate of 1 kHz.

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History
Original Manuscript: July 1, 2009
Manuscript Accepted: October 6, 2009
Revised Manuscript: September 29, 2009
Published: October 15, 2009

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Author Affiliations

Yong Wan Lee

Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA

Bong-Jun Kim, Sungyoul Choi, Hyun-Tak Kim

Metal-Insulator Transition Project, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea

Yong Wook Lee

Metal-Insulator Transition Project, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, KoreaSchool of Electrical Engineering, Pukyong National University, San 100 Yongdang-dong, Nam-gu,

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