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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 22 — Oct. 26, 2009
  • pp: 19739–19748

Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

C.-Y. Lin, Y.-C. Xin, Y. Li, F. L. Chiragh, and L. F. Lester  »View Author Affiliations

Optics Express, Vol. 17, Issue 22, pp. 19739-19748 (2009)

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By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and experimentally verified for the cavity design of two-section passively mode-locked quantum dash (QDash) lasers. The new set of equations can be used to predict functional device layouts using the measured modal gain and loss characteristics as input. It is shown to be a valuable tool for realizing the cavity design of monolithic long-wavelength InAs/InP QDash passively mode-locked lasers.

© 2009 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 18, 2009
Revised Manuscript: September 15, 2009
Manuscript Accepted: October 6, 2009
Published: October 16, 2009

C.-Y. Lin, Y.-C. Xin, Y. Li, F. L. Chiragh, and L. F. Lester, "Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers," Opt. Express 17, 19739-19748 (2009)

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