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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 22 — Oct. 26, 2009
  • pp: 19842–19847

Iterative bandgap engineering at selected areas of quantum semiconductor wafers

Radoslaw Stanowski, Matthieu Martin, Richard Ares, and Jan J. Dubowski  »View Author Affiliations


Optics Express, Vol. 17, Issue 22, pp. 19842-19847 (2009)
http://dx.doi.org/10.1364/OE.17.019842


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Abstract

We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 μm in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.

© 2009 OSA

OCIS Codes
(120.6810) Instrumentation, measurement, and metrology : Thermal effects
(130.3120) Integrated optics : Integrated optics devices
(140.3390) Lasers and laser optics : Laser materials processing
(160.3130) Materials : Integrated optics materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Integrated Optics

History
Original Manuscript: August 3, 2009
Revised Manuscript: September 28, 2009
Manuscript Accepted: October 6, 2009
Published: October 16, 2009

Citation
Radoslaw Stanowski, Matthieu Martin, Richard Ares, and Jan J. Dubowski, "Iterative bandgap engineering at selected areas of quantum semiconductor wafers," Opt. Express 17, 19842-19847 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-22-19842


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