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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 22 — Oct. 26, 2009
  • pp: 20149–20154

Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers

Tien-Chang Lu, Bo-Siao Cheng, and Mei-Chun Liu  »View Author Affiliations

Optics Express, Vol. 17, Issue 22, pp. 20149-20154 (2009)

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Temperature dependent gain characteristics and linewidth enhancement factor (α-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and analyzed by using the Hakki-Paoli method. The optical gain and differential gain showed a more rapid increase as a function of the injected carriers as temperature decreased. The α-factor for the lasing mode was estimated as 2.8 at room temperature and decreased to a value as low as 0.6 at 80 K.

© 2009 OSA

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(250.7270) Optoelectronics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 28, 2009
Revised Manuscript: July 28, 2009
Manuscript Accepted: August 26, 2009
Published: October 21, 2009

Tien-Chang Lu, Bo-Siao Cheng, and Mei-Chun Liu, "Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers," Opt. Express 17, 20149-20154 (2009)

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