Abstract

The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

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History
Original Manuscript: August 28, 2009
Manuscript Accepted: October 19, 2009
Revised Manuscript: October 18, 2009
Published: October 21, 2009

References

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Author Affiliations

Huapu Pan, Zhi Li, Andreas Beling, Joe C. Campbell

Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA

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