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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 23 — Nov. 9, 2009
  • pp: 21108–21117

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent-Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi, and Masaya Notomi  »View Author Affiliations


Optics Express, Vol. 17, Issue 23, pp. 21108-21117 (2009)
http://dx.doi.org/10.1364/OE.17.021108


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Abstract

We demonstrate optical bistability in silicon using a high-Q (Q>105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 µW input power that is one tenth the previously reported value. Owing to the device’s unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ~0.5 µs.

© 2009 Optical Society of America

OCIS Codes
(160.6840) Materials : Thermo-optical materials
(190.1450) Nonlinear optics : Bistability
(140.3948) Lasers and laser optics : Microcavity devices
(350.4238) Other areas of optics : Nanophotonics and photonic crystals
(230.5298) Optical devices : Photonic crystals

ToC Category:
Photonic Crystals

History
Original Manuscript: August 27, 2009
Revised Manuscript: November 1, 2009
Manuscript Accepted: November 1, 2009
Published: November 4, 2009

Citation
Laurent-Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi, and Masaya Notomi, "Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity," Opt. Express 17, 21108-21117 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-23-21108


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References

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