Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes

doi:10.1364/OE.17.021250

Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes

C. H. Chiu, Peichen Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai »View Author Affiliations

Optics Express, Vol. 17, Issue 23, pp. 21250-21256 (2009)
http://dx.doi.org/10.1364/OE.17.021250

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Abstract

This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to 900nm. The light output power of a packaged InGaN/GaN LED with the incorporated nanorod layer is increased by 35.1% at an injection current of 350mA, compared to that of a conventional LED. Calculations based on a finite difference time domain (FDTD) method suggest that the extraction enhancement factor can be further improved by increasing the thickness of the nanorod layer, indicating great potential to enhance the luminous intensity of solid-state lighting devices using ITO nanorod structures.

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Optical Design and Fabrication

History
Original Manuscript: September 10, 2009
Revised Manuscript: October 24, 2009
Manuscript Accepted: October 24, 2009
Published: November 6, 2009

Citation
C. H. Chiu, Peichen Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, "Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes," Opt. Express 17, 21250-21256 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-23-21250

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References

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D. Eisert and V. Harle, “Simulations in the development process of GaN based LEDs and laser diodes,” in Int. Conf. Numerical Simulation of Semiconductor Optoelectronic Devices, Session 3: Photonic Devices, invited paper (2002).
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C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, and K. M. Leung, “Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors,” Semicond. Sci. Technol. 22(7), 831–835 (2007). [CrossRef]
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J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007). [CrossRef]
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H. Hashimoto, T. Naiki, T. Eto, and K. Fujiwara, “High Temperature Gas Reaction Specimen Chamber for an Electron Microscope,” J. Appl. Phys. 7(8), 946–952 (1968). [CrossRef]
H. Hashimoto, A. Kumao, T. Eto, and K. Fujiwara, “Drops of oxides on tungsten oxide needles and nuclei of dendritic crystals,” J. Cryst. Growth 7(1), 113–116 (1970). [CrossRef]
P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency Enhancement of GaAs Photovoltaics Employing Anti-Reflective Indium-Tin-Oxide Nano-Columns,” Adv. Mater. 21(16), 1618–1621 (2009). [CrossRef]
FullWAVE, Rsoft Design Group, Inc.
C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008). [CrossRef] [PubMed]

Aoshima, Y.
Banas, M.
Chang, C. H.
Chang, Y. C.
Chao, C. L.
Chen, C. C.
Chen, H.
Chen, S. Y.
Cheng, B. S.
Cheng, P. C.
Cheng, Y. J.
Chhajed, S.
Chiu, C. H.
Cho, J.
Choi, C. K.
Chu, J. T.
Crawford, M. H.
DenBaars, S. P.
Eto, T.
Figiel, J. J.
Fischer, A. J.
Fujii, T.
Fujiwara, K.
Gao, Y.
Han, J.
Hashimoto, H.
Horng, R. H.
Hoshino, K.
Hseuh, T. H.
Hsiao, C. S.
Hsieh, M. H.
Hsieh, Y. L.
Hsu, S. H.
Hsu, T. C.
Hu, E. L.
Huang, H. W.
Huang, S. H.
Hwang, J. M.
Ishida, F.
Izuno, K.
Jou, M. J.
Kao, C. C.
Kim, D. W.
Kim, H.
Kim, J. K.
Kim, Y. C.
Kumao, A.
Kuo, H. C.
Kuo, W. L.
Lee, B. J.
Lee, C. E.
Lee, H. Y.
Lee, J. H.
Lee, Y. J.
Leung, K. M.
Lin, C. F.
Lin, C. H.
Lu, T. C.
Lu, Y.
Luo, C. Y.
Mackie, D. M.
Mukai, T.
Murazaki, Y.
Naiki, T.
Nakamura, S.
Narukawa, Y.
Niki, I.
Nurmikko, A. V.
Oh, J. T.
Peng, Y. C.
Saraf, G.
Satoh, R.
Schubert, E. F.
Schubert, M. F.
Sharma, R.
Shen, H.
Shul, R. J.
Sone, C.
Song, J. J.
Song, Y. K.
Tadatomo, K.
Takaki, S.
Wang, S. C.
Wuu, D. S.
Yamada, M.
Yang, C. C.
Yang, C. S.
Yeom, G. Y.
Yoo, M. C.
Yoshimura, K.
Yu, C. C.
Yu, J. C.
Yu, P.
Zhang, L.
Zhong, J.
Zhou, H.

. Appl. Phys.

Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai, “Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip,” J. Appl. Phys. 41(Part 2, No. 4A), L371–L373 (2002).

Adv. Mater.

J. K. Kim, S. Chhajed, M. F. Schubert, E. F. Schubert, A. J. Fischer, M. H. Crawford, J. Cho, H. Kim, and C. Sone, “Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact,” Adv. Mater. 20(4), 801–804 (2008). [CrossRef]
P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency Enhancement of GaAs Photovoltaics Employing Anti-Reflective Indium-Tin-Oxide Nano-Columns,” Adv. Mater. 21(16), 1618–1621 (2009). [CrossRef]

Appl. Phys. Lett.

J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, M. Banas, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, “AlGaN/GaN quantum well ultraviolet light emitting diodes,” Appl. Phys. Lett. 73(12), 1688 (1998). [CrossRef]
J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007). [CrossRef]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004). [CrossRef]
D. W. Kim, H. Y. Lee, M. C. Yoo, and G. Y. Yeom, “Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure,” Appl. Phys. Lett. 86(5), 052108 (2005). [CrossRef]

Elec. Sol. Sta. Lett.

C. H. Chiu, C. E. Lee, C. L. Chao, B. S. Cheng, H. W. Huang, H. C. Kuo, T. C. Lu, S. C. Wang, W. L. Kuo, C. S. Hsiao, and S. Y. Chen, “Enhancement of Light Output Intensity by Integrating ZnO Nanorod Arrays on GaN-Based LLO Vertical LEDs,” Elec. Sol. Sta. Lett. 11(4), H84–H87 (2008). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

R. H. Horng, S. H. Huang, C. C. Yang, and D. S. Wuu, “Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1196–1201 (2006). [CrossRef]

IEEE Photon. Technol. Lett.

H. W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN–GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett. 17(5), 983–985 (2005). [CrossRef]
C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, “Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls,” IEEE Photon. Technol. Lett. 17(1), 19–21 (2005). [CrossRef]
Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “Enhancing the Output Power of GaN-Based LEDs Grown on Wet-Etched Patterned Sapphire Substrates,” IEEE Photon. Technol. Lett. 18(10), 1152–1154 (2006). [CrossRef]
J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, “Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire,” IEEE Photon. Technol. Lett. 20(18), 1563–1565 (2008). [CrossRef]

J. Appl. Phys.

S. Takaki, Y. Aoshima, and R. Satoh, “Growth Mechanism of Indium Tin Oxide Whiskers Prepared by Sputtering,” J. Appl. Phys. 46(No. 6A), 3537–3544 (2007). [CrossRef]
H. Hashimoto, T. Naiki, T. Eto, and K. Fujiwara, “High Temperature Gas Reaction Specimen Chamber for an Electron Microscope,” J. Appl. Phys. 7(8), 946–952 (1968). [CrossRef]

J. Cryst. Growth

H. Hashimoto, A. Kumao, T. Eto, and K. Fujiwara, “Drops of oxides on tungsten oxide needles and nuclei of dendritic crystals,” J. Cryst. Growth 7(1), 113–116 (1970). [CrossRef]

Nanotechnology

H. W. Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, T. C. Lu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface,” Nanotechnology 16(9), 1844–1848 (2005). [CrossRef]

Opt. Express

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008). [CrossRef] [PubMed]

Phys. Status Solidi

F. Ishida, K. Yoshimura, K. Hoshino, and K. Tadatomo, “Improved light extraction efficiency of GaN-based light emitting diodes by using needle-shape indium tin oxide p-contact,” Phys. Status Solidi 5(6 c), 2083–2085 (2008). [CrossRef]

Semicond. Sci. Technol.

C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, and K. M. Leung, “Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors,” Semicond. Sci. Technol. 22(7), 831–835 (2007). [CrossRef]

Other

D. Eisert and V. Harle, “Simulations in the development process of GaN based LEDs and laser diodes,” in Int. Conf. Numerical Simulation of Semiconductor Optoelectronic Devices, Session 3: Photonic Devices, invited paper (2002).
S. Nakamura, and G. Fasol, The Blue Laser Diode, (Springer, New York, 1997).
FullWAVE, Rsoft Design Group, Inc.

2009, Yu, Adv. Mater.
2008, Chiu, Opt. Express
2008, Lee, IEEE Photon. Technol. Lett.
2008, Chiu, Elec. Sol. Sta. Lett.
2008, Ishida, Phys. Status Solidi
2008, Kim, Adv. Mater.
2007, Takaki, J. Appl. Phys.
2007, Zhong, Appl. Phys. Lett.
2007, Chiu, Semicond. Sci. Technol.
2006, Horng, IEEE J. Sel. Top. Quantum Electron.
2006, Lee, IEEE Photon. Technol. Lett.
2005, Kim, Appl. Phys. Lett.
2005, Huang, IEEE Photon. Technol. Lett.
2005, Huang, Nanotechnology
2005, Kao, IEEE Photon. Technol. Lett.
2004, Fujii, Appl. Phys. Lett.
2002, Narukawa, . Appl. Phys.
1998, Han, Appl. Phys. Lett.
1970, Hashimoto, J. Cryst. Growth
1968, Hashimoto, J. Appl. Phys.

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