OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 23 — Nov. 9, 2009
  • pp: 21336–21343

Device based in-chip critical dimension and overlay metrology

Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan  »View Author Affiliations


Optics Express, Vol. 17, Issue 23, pp. 21336-21343 (2009)
http://dx.doi.org/10.1364/OE.17.021336


View Full Text Article

Enhanced HTML    Acrobat PDF (1046 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

The use of optical metrology techniques in process control for microelectronic manufacturing has become widespread. These techniques are fast and non-destructive, allowing a higher sampling rate than non-optical methods like scanning electron or atomic force microscopy. One drawback of most optical metrology tools is the requirement that special measurement structures be fabricated in the scribe line between chips. This poses significant limitations regarding the characterization of lithography processes that may be overcome via in-chip measurements. In this paper we present experimental results for an in-chip optical metrology technique that allows direct measurement of both critical dimensions and overlay displacement errors in the DRAM manufacturing process. This technique does not require special target structures and is performed on the actual semiconductor devices.

© 2009 OSA

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.3940) Instrumentation, measurement, and metrology : Metrology

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: October 12, 2009
Manuscript Accepted: October 28, 2009
Published: November 6, 2009

Citation
Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan, "Device based in-chip critical dimension and overlay metrology," Opt. Express 17, 21336-21343 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-23-21336


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. C. J. Raymond, “Scatterometry for Semiconductor Metrology,” Handbook of silicon semiconductor metrology, A.C. Diebold, ed., (Academic press 2001), Chap. 18, p.477–514.
  2. N. P. Smith, “Overlay metrology at the crossroads,” Proc. SPIE 6922, 0277–0286 (2008).
  3. C. Hedlund, H.-O. Blom, and S. Berg, “Microloading effect in reactive ion etching,” J. Vac. Sci. Technol. A 12(4), 1962–1965 (1994). [CrossRef]
  4. K. Rochford, “Polarization and polarimetry,” NIST publication, http://boulder.nist.gov/div815/81503_pubs/PPMDocs/Rochford-EPST-02.pdf
  5. R. W. Collins, Handbook of Ellipsometry, H. G. Tompkins and E. A. Irene, eds., (William Andrew Publishing & Springer-Verlag, 2005), Chap. 7.3.3, p 546–566.
  6. L. Li, “New formulation of the Fourier modal method for crossed surface relief gratings,” J. Opt. Soc. Am. A 14(10), 2758–2767 (1997). [CrossRef]
  7. L. Li, “Symmetries of cross-polarization diffraction coefficients of gratings,” J. Opt. Soc. Am. A 17(5), 881–887 (2000). [CrossRef]
  8. P. Vagos, J. Hu, Z. Liu, and S. Rabello, “Uncertainty and Sensitivity Analysis and its application in OCD measurements,” Proc. of SPIE 7272, 72721N–72721N–9 (2009)

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article

OSA is a member of CrossRef.

CrossCheck Deposited