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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 23 — Nov. 9, 2009
  • pp: 21336–21343

Device based in-chip critical dimension and overlay metrology

Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan  »View Author Affiliations

Optics Express, Vol. 17, Issue 23, pp. 21336-21343 (2009)

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The use of optical metrology techniques in process control for microelectronic manufacturing has become widespread. These techniques are fast and non-destructive, allowing a higher sampling rate than non-optical methods like scanning electron or atomic force microscopy. One drawback of most optical metrology tools is the requirement that special measurement structures be fabricated in the scribe line between chips. This poses significant limitations regarding the characterization of lithography processes that may be overcome via in-chip measurements. In this paper we present experimental results for an in-chip optical metrology technique that allows direct measurement of both critical dimensions and overlay displacement errors in the DRAM manufacturing process. This technique does not require special target structures and is performed on the actual semiconductor devices.

© 2009 OSA

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.3940) Instrumentation, measurement, and metrology : Metrology

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: October 12, 2009
Manuscript Accepted: October 28, 2009
Published: November 6, 2009

Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan, "Device based in-chip critical dimension and overlay metrology," Opt. Express 17, 21336-21343 (2009)

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