Device based in-chip critical dimension and overlay metrology

doi:10.1364/OE.17.021336

Optics Express

Editor: C. Martijn de Sterke
Vol. 17, Iss. 23 — Nov. 9, 2009
pp: 21336–21343

Device based in-chip critical dimension and overlay metrology

Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan »View Author Affiliations

Optics Express, Vol. 17, Issue 23, pp. 21336-21343 (2009)
http://dx.doi.org/10.1364/OE.17.021336

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Abstract
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Abstract

The use of optical metrology techniques in process control for microelectronic manufacturing has become widespread. These techniques are fast and non-destructive, allowing a higher sampling rate than non-optical methods like scanning electron or atomic force microscopy. One drawback of most optical metrology tools is the requirement that special measurement structures be fabricated in the scribe line between chips. This poses significant limitations regarding the characterization of lithography processes that may be overcome via in-chip measurements. In this paper we present experimental results for an in-chip optical metrology technique that allows direct measurement of both critical dimensions and overlay displacement errors in the DRAM manufacturing process. This technique does not require special target structures and is performed on the actual semiconductor devices.

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.3940) Instrumentation, measurement, and metrology : Metrology

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: October 12, 2009
Manuscript Accepted: October 28, 2009
Published: November 6, 2009

Citation
Young-Nam Kim, Jong-Sun Paek, Silvio Rabello, Sangbong Lee, Jiangtao Hu, Zhuan Liu, Yudong Hao, and William McGahan, "Device based in-chip critical dimension and overlay metrology," Opt. Express 17, 21336-21343 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-23-21336

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References

C. J. Raymond, “Scatterometry for Semiconductor Metrology,” Handbook of silicon semiconductor metrology, A.C. Diebold, ed., (Academic press 2001), Chap. 18, p.477–514.
N. P. Smith, “Overlay metrology at the crossroads,” Proc. SPIE 6922, 0277–0286 (2008).
C. Hedlund, H.-O. Blom, and S. Berg, “Microloading effect in reactive ion etching,” J. Vac. Sci. Technol. A 12(4), 1962–1965 (1994). [CrossRef]
K. Rochford, “Polarization and polarimetry,” NIST publication, http://boulder.nist.gov/div815/81503_pubs/PPMDocs/Rochford-EPST-02.pdf
R. W. Collins, Handbook of Ellipsometry, H. G. Tompkins and E. A. Irene, eds., (William Andrew Publishing & Springer-Verlag, 2005), Chap. 7.3.3, p 546–566.
L. Li, “New formulation of the Fourier modal method for crossed surface relief gratings,” J. Opt. Soc. Am. A 14(10), 2758–2767 (1997). [CrossRef]
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P. Vagos, J. Hu, Z. Liu, and S. Rabello, “Uncertainty and Sensitivity Analysis and its application in OCD measurements,” Proc. of SPIE 7272, 72721N–72721N–9 (2009)

J. Opt. Soc. Am. A

J. Vac. Sci. Technol. A

C. Hedlund, H.-O. Blom, and S. Berg, “Microloading effect in reactive ion etching,” J. Vac. Sci. Technol. A 12(4), 1962–1965 (1994). [CrossRef]

Other

K. Rochford, “Polarization and polarimetry,” NIST publication, http://boulder.nist.gov/div815/81503_pubs/PPMDocs/Rochford-EPST-02.pdf
R. W. Collins, Handbook of Ellipsometry, H. G. Tompkins and E. A. Irene, eds., (William Andrew Publishing & Springer-Verlag, 2005), Chap. 7.3.3, p 546–566.
C. J. Raymond, “Scatterometry for Semiconductor Metrology,” Handbook of silicon semiconductor metrology, A.C. Diebold, ed., (Academic press 2001), Chap. 18, p.477–514.
N. P. Smith, “Overlay metrology at the crossroads,” Proc. SPIE 6922, 0277–0286 (2008).
P. Vagos, J. Hu, Z. Liu, and S. Rabello, “Uncertainty and Sensitivity Analysis and its application in OCD measurements,” Proc. of SPIE 7272, 72721N–72721N–9 (2009)

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