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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 24 — Nov. 23, 2009
  • pp: 21560–21565

Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer

Xuefeng Yang, Beibei Zeng, Changtao Wang, and Xiangang Luo  »View Author Affiliations

Optics Express, Vol. 17, Issue 24, pp. 21560-21565 (2009)

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We have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory.

© 2009 OSA

OCIS Codes
(220.3740) Optical design and fabrication : Lithography
(240.6680) Optics at surfaces : Surface plasmons
(260.3160) Physical optics : Interference
(160.3918) Materials : Metamaterials

ToC Category:
Optics at Surfaces

Original Manuscript: May 8, 2009
Revised Manuscript: July 30, 2009
Manuscript Accepted: October 1, 2009
Published: November 11, 2009

Xuefeng Yang, Beibei Zeng, Changtao Wang, and Xiangang Luo, "Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer," Opt. Express 17, 21560-21565 (2009)

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