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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 24 — Nov. 23, 2009
  • pp: 21782–21787

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 – 755 nm

Peter J. Schlosser, Jennifer E. Hastie, Stephane Calvez, Andrey B. Krysa, and Martin D. Dawson  »View Author Affiliations

Optics Express, Vol. 17, Issue 24, pp. 21782-21787 (2009)

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Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)0.51In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

© 2009 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: September 30, 2009
Revised Manuscript: November 2, 2009
Manuscript Accepted: November 8, 2009
Published: November 12, 2009

Peter J. Schlosser, Jennifer E. Hastie, Stephane Calvez, Andrey B. Krysa, and Martin D. Dawson, "InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 – 755 nm," Opt. Express 17, 21782-21787 (2009)

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999). [CrossRef]
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