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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 24 — Nov. 23, 2009
  • pp: 21782–21787

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 – 755 nm

Peter J. Schlosser, Jennifer E. Hastie, Stephane Calvez, Andrey B. Krysa, and Martin D. Dawson  »View Author Affiliations


Optics Express, Vol. 17, Issue 24, pp. 21782-21787 (2009)
http://dx.doi.org/10.1364/OE.17.021782


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Abstract

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)0.51In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

© 2009 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 30, 2009
Revised Manuscript: November 2, 2009
Manuscript Accepted: November 8, 2009
Published: November 12, 2009

Citation
Peter J. Schlosser, Jennifer E. Hastie, Stephane Calvez, Andrey B. Krysa, and Martin D. Dawson, "InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 – 755 nm," Opt. Express 17, 21782-21787 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-24-21782


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References

  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999). [CrossRef]
  2. S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009). [CrossRef]
  3. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008). [CrossRef]
  4. A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005). [CrossRef]
  5. B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett. 33(22), 2719–2721 (2008). [CrossRef] [PubMed]
  6. J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).
  7. T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008). [CrossRef]
  8. M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Südmeyer, U. Keller, and E. U. Rafailov, “High-power quantum-dot-based semiconductor disk laser,” Opt. Lett. 34(11), 1672–1674 (2009). [CrossRef] [PubMed]
  9. J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005). [CrossRef] [PubMed]
  10. A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007). [CrossRef]
  11. J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004). [CrossRef]

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