High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
Optics Express, Vol. 17, Issue 24, pp. 21986-21991 (2009)
http://dx.doi.org/10.1364/OE.17.021986
Enhanced HTML 
Acrobat PDF (460 KB)
Abstract
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
© 2009 OSA
OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.5750) Optical devices : Resonators
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
ToC Category:
Optoelectronics
History
Original Manuscript: July 21, 2009
Revised Manuscript: September 20, 2009
Manuscript Accepted: September 24, 2009
Published: November 17, 2009
Citation
F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O'Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Martí, "High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode," Opt. Express 17, 21986-21991 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-24-21986
Sort: Year | Journal | Reset
References
- R. A. Soref and B. R. Benett, “Electrooptical effects in Silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987). [CrossRef]
- F. Y. Gardes, G. T. Reed, N. G. Emerson, and C. E. Png, “A sub-micron depletion-type photonic modulator in silicon on insulator,” Opt. Express 13(22), 8845–8854 (2005). [CrossRef] [PubMed]
- D. Marris, E. Cassan, and L. Vivien, “Response time analysis of SiGe/Si modulation-doped multiple-quantum-well structures for optical modulation,” J. Appl. Phys. 96(11), 6109–6111 (2004). [CrossRef]
- A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007). [CrossRef] [PubMed]
- D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
- A. Liu, L. Liao, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “Recent development in a high-speed silicon optical modulator based on reverse-biased pn diode in a silicon waveguide,” Semicond. Sci. Technol. 23(064001), 1–7 (2008). [CrossRef]
- C. Gunn, “CMOS Photonics for High-Speed Interconnects,” Micro, IEEE 26(2), 58–66 (2006). [CrossRef]
- Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express 15(2), 430–436 (2007). [CrossRef] [PubMed]
- J. B. You, M. Park, J. W. Park, and G. Kim, “12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode,” Opt. Express 16(22), 18340–18344 (2008). [CrossRef] [PubMed]
- Surrey Ion Beam Centre implantation facility, http://www.ionbeamcentre.co.uk/ , CEA Leti, http://www-leti.cea.fr
- T. Alzanki, R. Gwilliam, N. Emerson, and B. J. Sealy, “Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon,” Appl. Phys. Lett. 85(11), 1979–1980 (2004). [CrossRef]
Cited By |
 Alert me when this paper is cited |
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.
Related Journal Articles 
- Silicon microring carrier-injection-based modulators/switches with tunable extinction ratios and OR-logic switching by using waveguide cross-coupling (OE)
- Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators (OE)
- 12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode (OE)
- Strong electro-optical modulation enhancement in a slow wave corrugated waveguide (OE)
- 40 Gb/s silicon photonics modulator for TE and TM polarisations (OE)
Related Conference Papers
- A LiNbO3 Disk Resonator with a SiO2 Cladding Layer and Proximate Electrodes
- Active Optical Antenna
- Silicon-on-Insulator Tunable Waveguide-Coupled Microdisk Resonators with Selectively Integrated p-i-n Diodes
- Electro-Optic Probe Based on an Unbalanced AlGaAs/GaAs Microresonator
- Tunable Narrowband Photonic Filters with Whispering Gallery Mode Resonators
« Previous Article | Next Article »
OSA is a member of 