A high spectral sensitivity interferometer based on the dispersive property of the semiconductor GaAs
Optics Express, Vol. 17, Issue 24, pp. 22254-22259 (2009)
http://dx.doi.org/10.1364/OE.17.022254
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Abstract
We develop an interferometer which has high spectral sensitivity based on the dispersive property of the semiconductor GaAs in the near-infrared region. Our experiment demonstrates that the spectral sensitivity could be greatly enhanced by adding a slow light medium into the interferometer and is proportional to the group index of the material. Subsequently the factors which influence the spectral sensitivity of the interferometer are analyzed. Moreover, we provide potential applications of such interferometers using the dispersive property of semiconductor in whole infrared region.
© 2009 OSA
OCIS Codes
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6420) Spectroscopy : Spectroscopy, nonlinear
(300.6470) Spectroscopy : Spectroscopy, semiconductors
ToC Category:
Spectroscopy
History
Original Manuscript: September 17, 2009
Revised Manuscript: November 1, 2009
Manuscript Accepted: November 10, 2009
Published: November 20, 2009
Citation
YuanXue Cai, YunDong Zhang, ChaoBo Yang, BoShi Dang, Jinfang Wang, and Ping Yuan, "A high spectral sensitivity interferometer based on the dispersive property of the semiconductor GaAs," Opt. Express 17, 22254-22259 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-24-22254
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