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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 25 — Dec. 7, 2009
  • pp: 22351–22357

Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy

Alexander M. Gigler, Andreas J. Huber, Michael Bauer, Alexander Ziegler, Rainer Hillenbrand, and Robert W. Stark  »View Author Affiliations


Optics Express, Vol. 17, Issue 25, pp. 22351-22357 (2009)
http://dx.doi.org/10.1364/OE.17.022351


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Abstract

We map a nanoindent in a silicon carbide (SiC) crystal by infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) and confocal Raman microscopy and interpret the resulting images in terms of local residual stress-fields. By comparing near-field IR and confocal Raman images, we find that the stress-induced shifts of the longitudinal optical phonon-frequencies (LO) and the related shift of the phonon-polariton near-field resonance give rise to Raman and s-SNOM image contrasts, respectively. We apply single-frequency IR s-SNOM for nanoscale resolved imaging of local stress-fields and confocal Raman microscopy to obtain the complete spectral information about stress-induced shifts of the phonon frequencies at diffraction limited spatial resolution. The spatial extension of the local stress-field around the nanoindent agrees well between both techniques. Our results demonstrate that both methods ideally complement each other, allowing for the detailed analysis of stress-fields at e.g. material and grain boundaries, in Micro-Electro-Mechanical-Systems (MEMS), or in engineered nanostructures.

© 2009 OSA

OCIS Codes
(240.5420) Optics at surfaces : Polaritons
(240.6680) Optics at surfaces : Surface plasmons
(300.6330) Spectroscopy : Spectroscopy, inelastic scattering including Raman
(240.3695) Optics at surfaces : Linear and nonlinear light scattering from surfaces
(180.4243) Microscopy : Near-field microscopy
(180.5655) Microscopy : Raman microscopy

ToC Category:
Microscopy

History
Original Manuscript: September 18, 2009
Revised Manuscript: October 26, 2009
Manuscript Accepted: November 9, 2009
Published: November 23, 2009

Citation
Alexander M. Gigler, Andreas J. Huber, Michael Bauer, Alexander Ziegler, Rainer Hillenbrand, and Robert W. Stark, "Nanoscale residual stress-field mapping
around nanoindents in SiC
by IR s-SNOM and confocal Raman microscopy," Opt. Express 17, 22351-22357 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-25-22351


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