Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity
Optics Express, Vol. 17, Issue 25, pp. 22505-22513 (2009)
http://dx.doi.org/10.1364/OE.17.022505
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Abstract
We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (μW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.
© 2009 OSA
OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.3120) Optical devices : Integrated optics devices
(230.5750) Optical devices : Resonators
(350.4238) Other areas of optics : Nanophotonics and photonic crystals
ToC Category:
Photonic Crystals
History
Original Manuscript: August 24, 2009
Revised Manuscript: November 4, 2009
Manuscript Accepted: November 4, 2009
Published: November 24, 2009
Citation
Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, and Masaya Notomi, "Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity," Opt. Express 17, 22505-22513 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-25-22505
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