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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 25 — Dec. 7, 2009
  • pp: 22855–22860

Transient memory effect in the photoluminescence of InGaN single quantum wells

Christian Feldmeier, Masayoshi Abiko, Ulrich T. Schwarz, Yoichi Kawakami, and Ruggero Micheletto  »View Author Affiliations

Optics Express, Vol. 17, Issue 25, pp. 22855-22860 (2009)

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The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.

© 2009 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5230) Optoelectronics : Photoluminescence
(310.5448) Thin films : Polarization, other optical properties

ToC Category:

Original Manuscript: October 9, 2009
Revised Manuscript: November 24, 2009
Manuscript Accepted: November 24, 2009
Published: November 30, 2009

Christian Feldmeier, Masayoshi Abiko, Ulrich T. Schwarz, Yoichi Kawakami, and Ruggero Micheletto, "Transient memory effect in the photoluminescence of InGaN single quantum wells," Opt. Express 17, 22855-22860 (2009)

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  1. S. Strite and H. Morkoc¸, "Gallium nitride, aluminum nitride and indium nitride: A review," J. Vac. Sci. Techol. B 10(4), 1237-1266 (1992). [CrossRef]
  2. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, 1997).
  3. I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters," Jpn. J. Appl. Phys. 36(9A), 5393-5408 (1997). [CrossRef]
  4. T. Mukai, H. Narimatsu, and S. Nakamura, "Amber InGaN-based light-emitting diodes operable at high ambient temperatures," Jpn. J. Appl. Phys. 37(5A), L479-L481 (1998). [CrossRef]
  5. J. W. Orton and C. T. Foxon, "Group III nitride semiconductors for short wavelength light-emitting devices," Rep. Prog. Phys. 61(1), 1-75 (1998). [CrossRef]
  6. G. Marutsuki, T. Narukawa, Y.and Mitani, T. Mukai, G. Shinomiya, A. Kaneta, Y. Kawakami, and S. Fujita, "Electroluminescence mapping of InGaN-based LEDs by SNOM," Phys. Stat. Sol. A 192(1), 110-116 (2002). [CrossRef]
  7. Y. Narukawa and Y. Kawakami, "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode..." Applied Physics Letters 70(8), 981 (1997). [CrossRef]
  8. M. A. Reshchikov, M. Z. Iqbal, H. Morko, S. S. Park, and K. Y. Lee, "Long-lasting photoluminescence in freestanding GaN templates," Appl. Phys. Lett. 83(2), 266 - (2003). [CrossRef]
  9. B. Kim, I. Kuskovsky, I. P. Herman, D. Li, and G. F. Neumark, "Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films," J. Appl. Phys. 86(4), 2034-2037 (1999). [CrossRef]
  10. I. Shmagin and J. Muth, "Optical metastability in bulk GaN single crystals," Appl. Phys. Lett. 71(4), 455 - (1997). [CrossRef]
  11. S. J. Xu, G. Li, S. J. Chua, X. C. Wang, and W. Wang, "Observation of optically-active metastable defects in undoped GaN epilayers." Appl. Phys. Lett. 72(19) (1998).
  12. B. J. Ryan, M. O. Henry, E. McGlynn, and J. Fryar, "Investigation of optical metastability in GaN using photoluminescence spectroscopy," Physica B: Condensed Matter 340-342, 452 - 456 (2003). Proceedings of the 22nd International Conference on Defects in Semiconductors. [CrossRef]
  13. M. A. Reshchikov, J. Xie, L. He, X. Gu, Y. T. Moon, Y. Fu, and H. Morko, "Effect of potential fluctuations on photoluminescence in Mg-doped GaN," Phys. Stat. Sol. c 2(7), 2761 - 2764 (2005). [CrossRef]
  14. I. K. Shmagin, J. F. Muth, R. M. Kolbas, M. P. Mack, A. C. Abare, S. Keller, L. A. Coldren, U. K. Mishra, and S. P. DenBaars, "Reconfigurable optical properties in InGaN/GaN quantum wells," Appl. Phys. Lett. 71(11), 1455-1457 (1997). [CrossRef]
  15. B. Monemar, P.P Paskov, J.P. Bergman, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui "Observation of optical instabilities in Recombination of free and bound excitons in GaN," Phys. Stat. Sol. 245(9), 1723 -1740 (2008).
  16. 1. R. Micheletto, M. Abiko, A. Kaneta, Y. Kawakami, Y. Narukawa, and T. Mukai, "Observation of optical instabilities in the photoluminescence of InGaN single quantum well," Appl. Phys. Lett. 88(6), 061,118 (2006).
  17. R. Micheletto, N. Yoshimatsu, A. Kaneta, Y. Kawakami, and S. Fujita, "Indium Concentration on PL Spatial in homogeneity in InGaN Single Quantum Well Structures detected by an original low cost near-field probes," Appl. Surface Scie. 229, 338-345 (2004). [CrossRef]

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