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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 25 — Dec. 7, 2009
  • pp: 22912–22917

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min-Yung Ke, Tzu-Chun Lu, Sheng-Chieh Yang, Cheng-Pin Chen, Yun-Wei Cheng, Liang-Yi Chen, Cheng-Ying Chen, Jr-Hau He, and JianJang Huang  »View Author Affiliations


Optics Express, Vol. 17, Issue 25, pp. 22912-22917 (2009)
http://dx.doi.org/10.1364/OE.17.022912


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Abstract

In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.

© 2009 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: September 28, 2009
Revised Manuscript: November 9, 2009
Manuscript Accepted: November 23, 2009
Published: December 1, 2009

Citation
Min-Yung Ke, Tzu-Chun Lu, Sheng-Chieh Yang, Cheng-Pin Chen, Yun-Wei Cheng, Liang-Yi Chen, Cheng-Ying Chen, Jr-Hau He, and JianJang Huang, "UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers," Opt. Express 17, 22912-22917 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-25-22912


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