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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 25 — Dec. 7, 2009
  • pp: 22912–22917

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min-Yung Ke, Tzu-Chun Lu, Sheng-Chieh Yang, Cheng-Pin Chen, Yun-Wei Cheng, Liang-Yi Chen, Cheng-Ying Chen, Jr-Hau He, and JianJang Huang  »View Author Affiliations

Optics Express, Vol. 17, Issue 25, pp. 22912-22917 (2009)

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In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.

© 2009 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: September 28, 2009
Revised Manuscript: November 9, 2009
Manuscript Accepted: November 23, 2009
Published: December 1, 2009

Min-Yung Ke, Tzu-Chun Lu, Sheng-Chieh Yang, Cheng-Pin Chen, Yun-Wei Cheng, Liang-Yi Chen, Cheng-Ying Chen, Jr-Hau He, and JianJang Huang, "UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers," Opt. Express 17, 22912-22917 (2009)

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  1. S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006). [CrossRef]
  2. W. Liu, S. L. Gu, J. D. Ye, S. M. Zhu, S. M. Liu, X. Zhou, R. Zhang, Y. Shi, Y. D. Zheng, Y. Hang, and C. L. Zhang, “Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique,” Appl. Phys. Lett. 88(9), 092101 (2006). [CrossRef]
  3. J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
  4. J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112 (2006). [CrossRef]
  5. Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003). [CrossRef]
  6. H. Ohta, K.-I. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475 (2000). [CrossRef]
  7. D. J. Rogers, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918 (2006). [CrossRef]
  8. J. W. Sun, Y. M. Lu, Y. C. Liu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, D. X. Zhao, and X. W. Fan, “Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes,” J. Phys. D Appl. Phys. 41(15), 155103 (2008). [CrossRef]
  9. M. A. Khan, Q. Chen, R. A. Skogman, and J. N. Kuznia, “Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers,” Appl. Phys. Lett. 66(16), 2046 (1995). [CrossRef]
  10. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113 (2007). [CrossRef]
  11. Y. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Zhu, and T. Yao, “Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization,” J. Appl. Phys. 84(7), 3912 (1998). [CrossRef]
  12. H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246 (2004). [CrossRef]
  13. A. G. Milnes, and D. L. Feucht, “Heterojunctions and Metal-Semiconductor Junctions” (Academic, New York, 1972)

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