On-chip, planar integration of Er doped silicon-rich silicon nitride microdisk with SU-8 waveguide with sub-micron gap control
Optics Express, Vol. 17, Issue 25, pp. 22918-22924 (2009)
http://dx.doi.org/10.1364/OE.17.022918
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Abstract
On-chip, planar integration of Er-doped Silicon-rich silicon nitride microdisks with SU-8 waveguide and polymer cladding is achieved. The lack of high temperature or etching processes allows back-end integration without any optical damage to the microcavity resonator. The maximum measured Q-factor at 1475.5 nm was 13,000, corresponding to calculated intrinsic resonator Q-factor of 25,000 that is limited by process-related roughness.
© 2009 OSA
OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(230.5750) Optical devices : Resonators
ToC Category:
Integrated Optics
History
Original Manuscript: October 13, 2009
Revised Manuscript: November 12, 2009
Manuscript Accepted: November 20, 2009
Published: December 1, 2009
Citation
Jee Soo Chang, Seok Chan Eom, Gun Yong Sung, and Jung H. Shin, "On-chip, planar integration of Er doped silicon-rich silicon nitride microdisk with SU-8 waveguide with sub-micron gap control," Opt. Express 17, 22918-22924 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-25-22918
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