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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 26 — Dec. 21, 2009
  • pp: 23702–23711

Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal

Chen-Yang Huang, Hao-Min Ku, and Shiuh Chao  »View Author Affiliations

Optics Express, Vol. 17, Issue 26, pp. 23702-23711 (2009)

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Three dimensional (3-D) auto-cloned photonics crystal (APhC) of Ta2O5/SiO2 multi-layers was fabricated on the backside of the sapphire wafer that had InGaN/GaN multi-quantum well LED on the front side. 94% light extraction enhancement in comparison to the LED without APhC was obtained. Electrical properties of the LED did not altered by the APhC and its fabrication process. Experimental evidences showed that light extraction enhancement mechanism is two-folded: for rays that are emitted from the source and incident at lower angle of incidence to the APhC, the APhC acts as a high reflector; for rays incident at higher angle of incidence to the APhC, first order diffracted light from the APhC appears, the diffracted light is concentrated around the surface normal and is therefore capable of escaping.

© 2009 Optical Society of America

OCIS Codes
(050.1970) Diffraction and gratings : Diffractive optics
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties
(050.5298) Diffraction and gratings : Photonic crystals
(050.6875) Diffraction and gratings : Three-dimensional fabrication

ToC Category:
Optical Devices

Original Manuscript: August 26, 2009
Revised Manuscript: November 1, 2009
Manuscript Accepted: November 1, 2009
Published: December 11, 2009

Chen-Yang Huang, Hao-Min Ku, and Shiuh Chao, "Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal," Opt. Express 17, 23702-23711 (2009)

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