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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 26 — Dec. 21, 2009
  • pp: 23702–23711

Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal

Chen-Yang Huang, Hao-Min Ku, and Shiuh Chao  »View Author Affiliations


Optics Express, Vol. 17, Issue 26, pp. 23702-23711 (2009)
http://dx.doi.org/10.1364/OE.17.023702


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Abstract

Three dimensional (3-D) auto-cloned photonics crystal (APhC) of Ta2O5/SiO2 multi-layers was fabricated on the backside of the sapphire wafer that had InGaN/GaN multi-quantum well LED on the front side. 94% light extraction enhancement in comparison to the LED without APhC was obtained. Electrical properties of the LED did not altered by the APhC and its fabrication process. Experimental evidences showed that light extraction enhancement mechanism is two-folded: for rays that are emitted from the source and incident at lower angle of incidence to the APhC, the APhC acts as a high reflector; for rays incident at higher angle of incidence to the APhC, first order diffracted light from the APhC appears, the diffracted light is concentrated around the surface normal and is therefore capable of escaping.

© 2009 Optical Society of America

OCIS Codes
(050.1970) Diffraction and gratings : Diffractive optics
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties
(050.5298) Diffraction and gratings : Photonic crystals
(050.6875) Diffraction and gratings : Three-dimensional fabrication

ToC Category:
Optical Devices

History
Original Manuscript: August 26, 2009
Revised Manuscript: November 1, 2009
Manuscript Accepted: November 1, 2009
Published: December 11, 2009

Citation
Chen-Yang Huang, Hao-Min Ku, and Shiuh Chao, "Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal," Opt. Express 17, 23702-23711 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-26-23702


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References

  1. H. Ichikawa and T. Baba, "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal," Appl. Phys. Lett. 84, 457-459 (2004). [CrossRef]
  2. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004). [CrossRef]
  3. Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, "GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy," J. Cryst. Growth 272, 327-332 (2004). [CrossRef]
  4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett 72(2), 211-213 (1998). [CrossRef]
  5. J. Q. Xi, H. Luo, A. J. Pasquale, J. K. Kim, and E. F. Schubert, "Enhanced light extraction in GaInN light-emitting diode with pyramid reflector," IEEE Photon. Technol. Lett. 18, 2347-2349 (2006). [CrossRef]
  6. T. Gessmann, E. F. Schubert, J. W. Graff, K. Streubel, and C. Karnutsch, "Omnidirectional reflective contacts for light-emitting diodes," IEEE Electron. Dev. Lett. 24, 683-685 (2003). [CrossRef]
  7. J. K. Kim, T. Gessmann, H. Luo, and E. F. Schubert, "GaInN light-emitting diodes with RuO2/SiO2/Ag omnidirectional reflector," Appl. Phys. Lett. 84, 4508-4510 (2004). [CrossRef]
  8. H. Ishikawa, B. Zhang, K. Asano, T. Egawa, and T. Jimbo, "Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si," J. Cryst. Growth 272, 322-326 (2004). [CrossRef]
  9. Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater. 32, 1523-1526 (2003). [CrossRef]
  10. J. H. Seo and J. H. Jang, "Nitride semiconductor light emitting diode and fabrication method thereof," US patent 20050133796A1 (2005).
  11. S. Kawakami, "Fabrication of submicrometer 3D periodic structures composed of Si/SiO2," Electron. Lett. 33, 1260-1261 (1997). [CrossRef]
  12. M. Notomi, T. Tamamura, T. Kawashima, and S. Kawakami, "Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap," Appl. Phys. Lett. 77, 4256-4258 (2000). [CrossRef]
  13. C. Y. Huang, H. M. Ku, and S. Chao, "Surface profile control of the autocloned photonic crystal by ion-beamsputter deposition with radio-frequency-bias etching," Appl. Opt. 84, 69-73 (2009). [CrossRef]

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