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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 26 — Dec. 21, 2009
  • pp: 24020–24029

Low-power, 2×2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks

Joris Van Campenhout, William M. Green, Solomon Assefa, and Yurii A. Vlasov  »View Author Affiliations


Optics Express, Vol. 17, Issue 26, pp. 24020-24029 (2009)
http://dx.doi.org/10.1364/OE.17.024020


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Abstract

We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17dB are obtained for both the ‘on’ and ‘off’ switching states over an optical bandwidth of 110nm, owing to the implementation of broadband 50% couplers. Full 2×2 switching functionality is demonstrated, with low power consumption (~ 3mW) and a fast switching time (< 4ns). The utilization of standard CMOS metallization results in a low drive voltage (~ 1V) and a record-low Vπ L (~ 0.06V·mm). The wide optical bandwidth is maintained for temperature variations up to 30K.

© 2009 Optical Society of America

OCIS Codes
(130.4815) Integrated optics : Optical switching devices
(250.6715) Optoelectronics : Switching

ToC Category:
Integrated Optics

History
Original Manuscript: November 10, 2009
Revised Manuscript: December 10, 2009
Manuscript Accepted: December 13, 2009
Published: December 16, 2009

Citation
Joris Van Campenhout, William M. Green, Solomon Assefa, and Yurii A. Vlasov, "Low-power, 2×2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks," Opt. Express 17, 24020-24029 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-26-24020


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