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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 5 — Mar. 2, 2009
  • pp: 3941–3950

Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Jordana, J. M. Fedeli, and L. Pavesi  »View Author Affiliations


Optics Express, Vol. 17, Issue 5, pp. 3941-3950 (2009)
http://dx.doi.org/10.1364/OE.17.003941


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Abstract

We present a detailed investigation of the different processes responsible for the optical nonlinearities of silicon nanocrystals at 1550 nm. Through z-scan measurements, the bound-electronic and excited carrier contributions to the nonlinear refraction were measured in presence of two-photon absorption. A study of the nonlinear response at different excitation powers has permitted to determine the change in the refractive index per unit of photo-excited carrier density σr and the value of the real bound-electronic nonlinear refraction n2be as a function of the nanocrystals size. Moreover at high excitation power, a saturation of the nonlinear absorption was observed due to band-filling effects.

© 2009 Optical Society of America

OCIS Codes
(190.0190) Nonlinear optics : Nonlinear optics
(190.3270) Nonlinear optics : Kerr effect

ToC Category:
Nonlinear Optics

History
Original Manuscript: December 1, 2008
Revised Manuscript: January 22, 2009
Manuscript Accepted: January 23, 2009
Published: February 27, 2009

Citation
Rita Spano, Nicola Daldosso, Massimo Cazzanelli, Luigi Ferraioli, Luca Tartara, Jin Yu, Vittorio Degiorgio, Emmanuel Giordana, Jean M. Fedeli, and Lorenzo Pavesi, "Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm," Opt. Express 17, 3941-3950 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-5-3941


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