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Optics Express

Optics Express

  • Vol. 17, Iss. 7 — Mar. 30, 2009
  • pp: 5118–5124

Deposited silicon high-speed integrated electro-optic modulator

Kyle Preston, Sasikanth Manipatruni, Alexander Gondarenko, Carl B. Poitras, and Michal Lipson  »View Author Affiliations


Optics Express, Vol. 17, Issue 7, pp. 5118-5124 (2009)
http://dx.doi.org/10.1364/OE.17.005118


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Abstract

We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p+n-n+ diode to achieve optical modulation using the free carrier plasma dispersion effect. Active optical devices in a deposited microelectronic material can break the dependence on the traditional single layer silicon-on-insulator platform and help lead to monolithic large-scale integration of photonic networks on a microprocessor chip.

© 2009 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
(230.2090) Optical devices : Electro-optical devices

ToC Category:
Integrated Optics

History
Original Manuscript: February 9, 2009
Revised Manuscript: March 9, 2009
Manuscript Accepted: March 13, 2009
Published: March 17, 2009

Citation
Kyle Preston, Sasikanth Manipatruni, Alexander Gondarenko, Carl B. Poitras, and Michal Lipson, "Deposited silicon high-speed integrated electro-optic modulator," Opt. Express 17, 5118-5124 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-7-5118


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