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Optics Express

Optics Express

  • Vol. 17, Iss. 7 — Mar. 30, 2009
  • pp: 5624–5629

Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride

Chen-Yang Huang, Hao-Min Ku, Wei-Tsai Liao, Chu-Li Chao, Jenq-Dar Tsay, and Shiuh Chao  »View Author Affiliations


Optics Express, Vol. 17, Issue 7, pp. 5624-5629 (2009)
http://dx.doi.org/10.1364/OE.17.005624


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Abstract

Ta2O5/SiO2 dielectric multi-layer micro-mirror array (MMA) with 3μm mirror size and 6μm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200°C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200°C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2.56μm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light.

© 2009 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(230.4040) Optical devices : Mirrors
(240.0310) Optics at surfaces : Thin films
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Optical Devices

History
Original Manuscript: December 23, 2008
Revised Manuscript: February 23, 2009
Manuscript Accepted: March 6, 2009
Published: March 25, 2009

Citation
Chen-Yang Huang, Hao-Min Ku, Wei-Tsai Liao, Chu-Li Chao, Jenq-Dar Tsay, and Shiuh Chao, "Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride," Opt. Express 17, 5624-5629 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-7-5624


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References

  1. S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000). [CrossRef]
  2. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001). [CrossRef]
  3. H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003). [CrossRef]
  4. H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004). [CrossRef]
  5. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998). [CrossRef]
  6. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998). [CrossRef]
  7. M. D. Dawson and R. W. Martin, US patent 6563141B1, (2003).
  8. K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008). [CrossRef]
  9. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004). [CrossRef]
  10. S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001). [CrossRef] [PubMed]
  11. H. Altug and J. Vuckovic, "Polarization control and sensing with two dimensional coupled photonic crystal microcavity arrays," Opt. Lett. 30, 982-984 (2005). [CrossRef]

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