Significantly enhanced superbroadband near infrared emission in bismuth/aluminum doped high-silica zeolite derived nanoparticles
Optics Express, Vol. 17, Issue 8, pp. 6239-6244 (2009)
http://dx.doi.org/10.1364/OE.17.006239
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Abstract
Significantly enhanced superbroadband near infrared emission has been realized in bismuth/aluminum doped high-silica zeolite derived nanoparticles. The emission intensity can be easily tailored by the introduction of aluminum. The luminescence lifetime can reach up to 695 μs. The results reveal that the existence of charge imbalance environment caused by [A104/2]- units in host materials is requisite to the formation of infrared-active Bi+. The finding presents a feasible route to design high-efficient bismuth activated infrared luminescent nanoparticles. These bismuth doped nanoparticles may find applications as superbroadband near infrared nano optical sources.
© 2009 Optical Society of America
OCIS Codes
(160.0160) Materials : Materials
(300.0300) Spectroscopy : Spectroscopy
(300.2140) Spectroscopy : Emission
ToC Category:
Materials
History
Original Manuscript: February 27, 2009
Revised Manuscript: March 25, 2009
Manuscript Accepted: March 26, 2009
Published: April 1, 2009
Citation
Hong-Tao Sun, Takashi Hasegawa, Minoru Fujii, Fumiaki Shimaoka, Zhenhua Bai, Minoru Mizuhata, Shinji Hayashi, and Shigehito Deki, "Significantly enhanced superbroadband near infrared emission in bismuth/aluminum doped high-silica zeolite derived nanoparticles," Opt. Express 17, 6239-6244 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-8-6239
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References
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