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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 1 — Jan. 4, 2010
  • pp: 56–62

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane

Yungting Chen, Tzuhuan Cheng, Chungliang Cheng, Chunhsiung Wang, Chihwei Chen, Chihming Wei, and YangFang Chen  »View Author Affiliations

Optics Express, Vol. 18, Issue 1, pp. 56-62 (2010)

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A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

© 2009 OSA

OCIS Codes
(040.6040) Detectors : Silicon
(230.5160) Optical devices : Photodetectors
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: September 9, 2009
Revised Manuscript: December 17, 2009
Manuscript Accepted: December 18, 2009
Published: December 22, 2009

Yungting Chen, Tzuhuan Cheng, Chungliang Cheng, Chunhsiung Wang, Chihwei Chen, Chihming Wei, and YangFang Chen, "Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane," Opt. Express 18, 56-62 (2010)

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