Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
Optics Express, Vol. 18, Issue 1, pp. 96-101 (2010)
http://dx.doi.org/10.1364/OE.18.000096
Enhanced HTML
Acrobat PDF (1537 KB)
Abstract
We report a vertical p-i-n thin-film germanium photodetector integrated on 3μm thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguides. The germanium width and thickness are carefully designed to achieve high responsivity yet retain high-speed performance. Even with fiber coupling loss included, the device has demonstrated greater than 0.7A/W external responsivity at 1550nm for TM polarization and 0.5A/W for TE polarization. A low dark current of 0.2μA at −0.5V bias is reported. 3dB bandwidths of 12GHz and 8.3GHz at −2.5V bias are also reported for 100μm and 200μm long devices, respectively. The device can cover the communication wavelength spectrum up to 1620nm with a relatively flat responsivity of >0.5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth.
© 2009 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors
ToC Category:
Integrated Optics
History
Original Manuscript: November 12, 2009
Revised Manuscript: December 17, 2009
Manuscript Accepted: December 17, 2009
Published: December 22, 2009
Citation
Ning-Ning Feng, Po Dong, Dawei Zheng, Shirong Liao, Hong Liang, Roshanak Shafiiha, Dazeng Feng, Guoliang Li, John E. Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides," Opt. Express 18, 96-101 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-1-96
Sort: Year | Journal | Reset
References
- L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006). [CrossRef]
- L. C. Kimerling, and L. Dal Negro, s. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, J. Liu, J. G. sandland, D. Sparacin, J. Michel, K. Wada and M. R. Watts, “Monolithic silicon microphotonics,” in Silicon Photonics: Topics in Applied Physics, L. Pavesi and D. J. Lockwood, eds., (Springer, Berlin, 2004) vol.94.
- G. T. Reed, and A. Knights, Silicon Photonucs, (Wiley, 93–97, 2004).
- L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009). [CrossRef] [PubMed]
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).
- J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008). [CrossRef]
- T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
- G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004). [CrossRef]
- S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006). [CrossRef]
- N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008). [CrossRef]
- Kotura Inc, http://www.kotura.com/products/ .
Cited By |
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.





OSA is a member of 