OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 10 — May. 10, 2010
  • pp: 10143–10153

Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs

Martin Hoffmann, Oliver D. Sieber, Deran J. H. C. Maas, Valentin J. Wittwer, Matthias Golling, Thomas Südmeyer, and Ursula Keller  »View Author Affiliations


Optics Express, Vol. 18, Issue 10, pp. 10143-10153 (2010)
http://dx.doi.org/10.1364/OE.18.010143


View Full Text Article

Enhanced HTML    Acrobat PDF (5052 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We present a detailed experimental study on the influence of dispersion on the pulse formation in passively modelocked vertical-external-cavity surface-emitting lasers (VECSELs). We have demonstrated that the shortest pulse duration requires slightly positive dispersion to balance the nonlinear phase shift induced by strong semiconductor gain and absorber saturation. This is in contrast to soliton modelocking in ion-doped solid-state lasers – but similarities remain and will be discussed. Our results are in good qualitative agreement with numerical simulations and confirm the quasi-soliton modelocking mechanism of ultrafast VECSELs.

© 2010 OSA

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 18, 2010
Revised Manuscript: April 22, 2010
Manuscript Accepted: April 25, 2010
Published: April 29, 2010

Citation
Martin Hoffmann, Oliver D. Sieber, Deran J. H. C. Maas, Valentin J. Wittwer, Matthias Golling, Thomas Südmeyer, and Ursula Keller, "Experimental verification of soliton-like pulse-shaping mechanisms in passively mode-locked VECSELs," Opt. Express 18, 10143-10153 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-10-10143


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997). [CrossRef]
  2. U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996). [CrossRef]
  3. U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, and M. T. Asom, “Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber,” Opt. Lett. 17(7), 505–507 (1992). [CrossRef] [PubMed]
  4. S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Haring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000). [CrossRef]
  5. K. G. Wilcox, Z. Mihoubi, G. J. Daniell, S. Elsmere, A. Quarterman, I. Farrer, D. A. Ritchie, and A. Tropper, “Ultrafast optical Stark mode-locked semiconductor laser,” Opt. Lett. 33(23), 2797–2799 (2008). [CrossRef] [PubMed]
  6. P. Klopp, U. Griebner, M. Zorn, A. Klehr, A. Liero, M. Weyers, and G. Erbert, “Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier,” Opt. Express 17(13), 10820–10834 (2009). [CrossRef] [PubMed]
  7. A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics 3(12), 729–731 (2009). [CrossRef]
  8. A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett. 30(3), 272–274 (2005). [CrossRef] [PubMed]
  9. B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett. 33(22), 2719–2721 (2008). [CrossRef] [PubMed]
  10. U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006). [CrossRef]
  11. D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B 88(4), 493–497 (2007). [CrossRef]
  12. V. J. Wittwer, B. Rudin, D. J. H. C. Maas, Y. Barbarin, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Modelocked Integrated External-Cavity Surface Emitting Laser (MIXSEL) generates 660 mW average power in 23-ps pulses at 3 GHz repetition rate,” ASSP Conference 2010 (2010).
  13. A.-R. Bellancourt, D. J. H. C. Maas, B. Rudin, M. Golling, T. Südmeyer, and U. Keller, “Modelocked integrated external-cavity surface emitting laser,” IET Optoelectron. 3(2), 61–72 (2009). [CrossRef]
  14. I. Young, E. Mohammed, J. Liao, S. Alexandra Kern Palermo, B. Block, M. Reshotko, and P. Chang, “Optical I/O Technology for Tera-Scale Computing,” IEEE International Solid-State Circuits Conference 2009 (2009).
  15. D. Huang, E. A. Swanson, C. P. Lin, J. S. Schuman, W. G. Stinson, W. Chang, M. R. Hee, T. Flotte, K. Gregory, C. A. Puliafito, and J. G. Fujimoto, “Optical coherence tomography,” Science 254(5035), 1178–1181 (1991). [CrossRef] [PubMed]
  16. H. R. Telle, G. Steinmeyer, A. E. Dunlop, J. Stenger, D. H. Sutter, and U. Keller, “Carrier-envelope offset phase control: A novel concept for absolute optical frequency measurement and ultrashort pulse generation,” Appl. Phys. B 69(4), 327–332 (1999). [CrossRef]
  17. T. Udem, R. Holzwarth, and T. W. Hänsch, “Optical frequency metrology,” Nature 416(6877), 233–237 (2002). [CrossRef] [PubMed]
  18. S. A. Diddams, T. Udem, J. C. Bergquist, E. A. Curtis, R. E. Drullinger, L. Hollberg, W. M. Itano, W. D. Lee, C. W. Oates, K. R. Vogel, and D. J. Wineland, “An optical clock based on a single trapped 199Hg+ ion,” Science 293(5531), 825–828 (2001). [CrossRef] [PubMed]
  19. D. J. H. C. Maas, A. R. Bellancourt, M. Hoffmann, B. Rudin, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “Growth parameter optimization for fast quantum dot SESAMs,” Opt. Express 16(23), 18646–18656 (2008). [CrossRef]
  20. I. D. Jung, F. X. Kärtner, L. R. Brovelli, M. Kamp, and U. Keller, “Experimental verification of soliton mode locking using only a slow saturable absorber,” Opt. Lett. 20(18), 1892–1894 (1995). [CrossRef] [PubMed]
  21. F. X. Kärtner, I. D. Jung, and U. Keller, “Soliton Mode-Locking with Saturable Absorbers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 540–556 (1996). [CrossRef]
  22. R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75(4-5), 445–451 (2002). [CrossRef]
  23. U. Keller, “Ultrafast solid-state lasers,” in Landolt-Börnstein. Laser Physics and Applications. Subvolume B: Laser Systems. Part I., G. Herziger, H. Weber, and R. Proprawe, eds. (Springer Verlag, Heidelberg, 2007), pp. 33–167.
  24. F. Gires and P. Tournois, “Interferometre utilisable pour la compression d'impulsions lumineuses modulees en frequence,” Acad. Sci., Paris, C. R. 258, 6112–6115 (1964).
  25. A. Gosteva, M. Haiml, R. Paschotta, and U. Keller, “Noise-related resolution limit of dispersion measurements with white-light interferometers,” J. Opt. Soc. Am. B 22, 1868-1874 (2005).
  26. D. Lorenser, H. J. Unold, D. J. H. C. Maas, A. Aschwanden, R. Grange, R. Paschotta, D. Ebling, E. Gini, and U. Keller, “Towards Wafer-Scale Integration of High Repetition Rate Passively Mode-Locked Surface-Emitting Semiconductor Lasers,” Appl. Phys. B 79(8), 927–932 (2004). [CrossRef]
  27. D. J. H. C. Maas, B. Rudin, A.-R. Bellancourt, D. Iwaniuk, S. V. Marchese, T. Südmeyer, and U. Keller, “High precision optical characterization of semiconductor saturable absorber mirrors,” Opt. Express 16(10), 7571–7579 (2008). [CrossRef] [PubMed]
  28. G. P. Agrawal and C. M. Bowden, “Concept of linewidth enhancement factor in semiconductor lasers: its usefulness and limitations,” IEEE Photon. Technol. Lett. 5(6), 640–642 (1993). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited