Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
Optics Express, Vol. 18, Issue 10, pp. 10604-10608 (2010)
http://dx.doi.org/10.1364/OE.18.010604
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Abstract
An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers
ToC Category:
Optoelectronics
History
Original Manuscript: February 17, 2010
Revised Manuscript: April 29, 2010
Manuscript Accepted: April 29, 2010
Published: May 6, 2010
Citation
Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, and Yasuhiko Arakawa, "Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer," Opt. Express 18, 10604-10608 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-10-10604
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