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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 10 — May. 10, 2010
  • pp: 10668–10673

Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Ye Tian, Xiangyang Ma, Peiliang Chen, Yuanyuan Zhang, and Deren Yang  »View Author Affiliations


Optics Express, Vol. 18, Issue 10, pp. 10668-10673 (2010)
http://dx.doi.org/10.1364/OE.18.010668


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Abstract

We report the electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films with different bandgap energies, which act as the semiconductor components in metal-insulator- semiconductor (MIS) structures fabricated on Si substrates. When the metal (Au herein) gates of the MIS structures are applied with sufficiently high positive voltages, random lasing from the MgxZn1-xO films occurs, featuring a series of narrow spikes in the emitted spectra. Overall, the central wavelength of the random lasing spectrum is tuned from ~377 to 352 nm with the increase of x value in MgxZn1-xO from 0 to 0.35. The mechanism for the electrically pumped random lasing has been tentatively elucidated taking into account both the multiple optical scattering and the optical gain proceeding in the MgxZn1-xO films.

© 2010 OSA

OCIS Codes
(140.3610) Lasers and laser optics : Lasers, ultraviolet
(290.5890) Scattering : Scattering, stimulated
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 29, 2010
Revised Manuscript: April 16, 2010
Manuscript Accepted: April 25, 2010
Published: May 6, 2010

Citation
Ye Tian, Xiangyang Ma, Peiliang Chen, Yuanyuan Zhang, and Deren Yang, "Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si," Opt. Express 18, 10668-10673 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-10-10668


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