MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement

doi:10.1364/OE.18.010674

MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement

Chen-Yang Huang, Hao-Min Ku, Chen-Zi Liao, and Shiuh Chao »View Author Affiliations

Optics Express, Vol. 18, Issue 10, pp. 10674-10684 (2010)
http://dx.doi.org/10.1364/OE.18.010674

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Abstract

Multi-quantum wells (MQWs) InGaN/GaN LEDs, 300μm × 300μm chip size, were fabricated with Ta₂O₅ / SiO₂ dielectric multi-layer micro-mirror array (MMA) embedded in the epitaxial-lateral-overgrowth (ELOG) gallium nitride (GaN) on the c-plane sapphire substrate. MQWs InGaN/GaN LEDs with ELOG embedded patterned SiO₂ array (P-SiO₂) of the same dimension as the MMA were also fabricated for comparison. Dislocation density was reduced for the ELOG samples. 75.2% light extraction enhancement for P-SiO₂-LED and 102.6% light extraction enhancement for MMA-LED were obtained over the standard LED. We showed that multiple-diffraction with high intensity from the MMA redirected the trap lights to escape from the LED causing the light extraction enhancement.

OCIS Codes
(050.0050) Diffraction and gratings : Diffraction and gratings
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(230.4040) Optical devices : Mirrors
(240.0310) Optics at surfaces : Thin films

ToC Category:
Optical Devices

History
Original Manuscript: April 5, 2010
Revised Manuscript: May 1, 2010
Manuscript Accepted: May 1, 2010
Published: May 6, 2010

Citation
Chen-Yang Huang, Hao-Min Ku, Chen-Zi Liao, and Shiuh Chao, "MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement," Opt. Express 18, 10674-10684 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-10-10674

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References

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Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, “Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector,” J. Electron. Mater. 32, 1523–1526 (2003). [CrossRef]
T. Nishinaga, T. Nakano, and S. Zhang, “Epitaxial lateral overgrowth of GaAs by LPE,” Jpn. J. Appl. Phys. 27, L964–L967 (1988). [CrossRef]
A. Usui, H. Sunakawa, A. Sakai and A. A. Yamaguchi, “Thick GaN epitaxial with low dislocation density by hydride vapor phase epitaxy,” Jpn. J. Appl. Phys. 36, L899–L902 (1997). [CrossRef]
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Banas, M. A.
Bremser, M. D.
Chao, C. L.
Chao, S.
Cho, C-Y
Chocho, K.
Craford, M. G.
Crawford, M. H.
Dai, Q.
David, A.
Davis, R. F.
Deguchi, K.
Epler, J. E.
Ferguson, I.
Fischer, A. J.
Fujii, T.
Gardner, N. F.
Gupta, S.
Han, S-H
Hibbard, D. L.
Hiramatsu, K.
Huang, C. Y.
Imada, Y.
Iwasa, N.
Jang, J.
Jeon, S. K.
Jung, G.Y.
Kato, M.
Kim, C.H.
Kim, J. K.
Kim, J. Y.
Kim, J.W.
Kim, K. S.
Kim, M. H.
Kim, Y. C.
Kiyoku, H.
Koleske, D. D.
Kozaki, T.
Krames, M. R.
Ku, H. M.
Kwon, M. K.
Lee, H. P.
Lee, J-B
Lee, S. R.
Lee, S-J
Liao, W. T.
Liu, H.
Ma, K.
Matsushita, T.
McGroddy, K.
Mitani, T.
Mukai, T.
Nagahama, S. I.
Nakamura, S.
Nakano, T.
Nam, O. H.
Narukawa, Y.
Niki, I.
Nishinaga, T.
Ohuchi, Y.
Okagawa, H.
Park, E. H.
Park, I. K.
Park, J. S.
Park, S.J.
Park, T-Y
Sakai, A.
Sano, M.
Schubert, E. F.
Schubert, M. F.
Senoh, M.
Sharma, R.
Shioji, S.
Sigalas, M. M.
Simmons, J. A.
So, W.
Sonobe, S.
Sugimoto, Y.
Sunakawa, H.
Tadatomo, K.
Taguchi, T.
Thaler, G.
Tsay, J. D.
Tsunekawa, T.
Umemoto, H.
Usui, A.
Wendt, J. R.
Wierer, J. J.
Yamada, M.
Yamada, T.
Yamaguchi, A. A.
Zhang, S.
Zhao, Y. S.
Zheleva, T. S.

Appl. Phys. Lett.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885–3887 (2004). [CrossRef]
A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S.nP. DenBaars, E. L. Hu, C. Weisbuch and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88, 061124 (2006). [CrossRef]
O. H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy,” Appl. Phys. Lett. 71, 2638–2640 (1997). [CrossRef]
S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate,” Appl. Phys. Lett. 72(2), 211–213 (1998). [CrossRef]
E. H. Park, J. Jang, S. Gupta, I. Ferguson, C.H. Kim, S. K. Jeon, and J. S. Park, “Air-voids embedded high efficiency InGaN-light emitting diode,” Appl. Phys. Lett. 93, 191103 (2008). [CrossRef]
M. K. Kwon, J. Y. Kim, I. K. Park, K. S. Kim, G.Y. Jung, S.J. Park, J.W. Kim, and Y. C. Kim, “Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal,” Appl. Phys. Lett. 92, 251110 (2008). [CrossRef]
Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94, 111109 (2009). [CrossRef]

J. Crystal Growth

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Present status of InGaN/GaN/AlGaN-based laser diodes,” J. Crystal Growth 189/190, 820–825 (1998). [CrossRef]

J. Electron. Mater.

Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, “Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector,” J. Electron. Mater. 32, 1523–1526 (2003). [CrossRef]

J. Phys: Condens. Matter

K. Hiramatsu, “Epitaxial lateral overgrowth techniques used in group III nitride epitaxy,” J. Phys: Condens. Matter 13, 6961–6975 (2001). [CrossRef]

Jpn. J. Appl. Phys.

T. Nishinaga, T. Nakano, and S. Zhang, “Epitaxial lateral overgrowth of GaAs by LPE,” Jpn. J. Appl. Phys. 27, L964–L967 (1988). [CrossRef]
A. Usui, H. Sunakawa, A. Sakai and A. A. Yamaguchi, “Thick GaN epitaxial with low dislocation density by hydride vapor phase epitaxy,” Jpn. J. Appl. Phys. 36, L899–L902 (1997). [CrossRef]
K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power In-GaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 40, L583–L585 (2001). [CrossRef]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaNbased near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41, L1431–L1433 (2002). [CrossRef]

Opt. Express

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