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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 10 — May. 10, 2010
  • pp: 10674–10684

MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement

Chen-Yang Huang, Hao-Min Ku, Chen-Zi Liao, and Shiuh Chao  »View Author Affiliations

Optics Express, Vol. 18, Issue 10, pp. 10674-10684 (2010)

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Multi-quantum wells (MQWs) InGaN/GaN LEDs, 300μm × 300μm chip size, were fabricated with Ta2O5 / SiO2 dielectric multi-layer micro-mirror array (MMA) embedded in the epitaxial-lateral-overgrowth (ELOG) gallium nitride (GaN) on the c-plane sapphire substrate. MQWs InGaN/GaN LEDs with ELOG embedded patterned SiO2 array (P-SiO2) of the same dimension as the MMA were also fabricated for comparison. Dislocation density was reduced for the ELOG samples. 75.2% light extraction enhancement for P-SiO2-LED and 102.6% light extraction enhancement for MMA-LED were obtained over the standard LED. We showed that multiple-diffraction with high intensity from the MMA redirected the trap lights to escape from the LED causing the light extraction enhancement.

© 2010 Optical Society of America

OCIS Codes
(050.0050) Diffraction and gratings : Diffraction and gratings
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(230.4040) Optical devices : Mirrors
(240.0310) Optics at surfaces : Thin films

ToC Category:
Optical Devices

Original Manuscript: April 5, 2010
Revised Manuscript: May 1, 2010
Manuscript Accepted: May 1, 2010
Published: May 6, 2010

Chen-Yang Huang, Hao-Min Ku, Chen-Zi Liao, and Shiuh Chao, "MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement," Opt. Express 18, 10674-10684 (2010)

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