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InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai

Open Access Open Access

Abstract

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 1018/cm3 was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.

©2010 Optical Society of America

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Figures (3)
Fig. 1
Fig. 1 (a) Schematic structure of LED-I and photon paths in LED-I; (b) detailed epitaxial layer structure; (c) typical tilted-angle-view SEM image of LED-I; (d) typical SEM image of LED-I after the formation of Cr/Au electrodes; (e) enlarged tilted-angle-view SEM image taken on the regrown area of LED-I after the removal of SiO2 mask layer; and (f) cross-section view SEM image of LED-I.

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Fig. 2
Fig. 2 Typical light output-current (L-I) characteristics of LED-I and LED-II with bare-chip form; the inset shows the typical beam patterns taken from LED-I and LED-II. These LEDs were all bonded on the TO 66.

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Fig. 3
Fig. 3 I-V and dynamic resistance characteristics of the LED-I and LED-II.

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