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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 11 — May. 24, 2010
  • pp: 10924–10930

Pulsed pumping of silicon nanocrystal light emitting devices

Tim Creazzo, Brandon Redding, Elton Marchena, Janusz Murakowski, and Dennis W. Prather  »View Author Affiliations

Optics Express, Vol. 18, Issue 11, pp. 10924-10930 (2010)

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Typical silicon nanocrystal light emitting devices (LEDs) operate under direct current (DC) biasing conditions that require high electric fields or high current densities. The electroluminescence (EL) under these conditions relies on impact excitation that can be damaging to the material. In this work, we present bipolar injection into silicon nanocrystal LEDs using a pulsed pumping scheme. We measured the frequency dependence of the integrated and time-resolved EL of the LEDs. The frequency dependent behavior of the time-resolved characteristics is used to explain the integrated EL measurements. In addition, the light output of the device was measured under pulsed excitation and was found to increase by a factor of 18 as compared to the case of DC excitation.

© 2010 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials

ToC Category:
Optical Devices

Original Manuscript: February 10, 2010
Manuscript Accepted: May 3, 2010
Published: May 10, 2010

Tim Creazzo, Brandon Redding, Elton Marchena, Janusz Murakowski, and Dennis W. Prather, "Pulsed pumping of silicon nanocrystal light emitting devices," Opt. Express 18, 10924-10930 (2010)

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