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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 11 — May. 24, 2010
  • pp: 11192–11201

Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition

Ryan M. Briggs, Imogen M. Pryce, and Harry A. Atwater  »View Author Affiliations

Optics Express, Vol. 18, Issue 11, pp. 11192-11201 (2010)

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We have integrated lithographically patterned VO2 thin films grown by pulsed laser deposition with silicon-on-insulator photonic waveguides to demonstrate a compact in-line absorption modulator for use in photonic circuits. Using single-mode waveguides at λ = 1550 nm, we show optical modulation of the guided transverse-electric mode of more than 6.5 dB with 2 dB insertion loss over a 2-µm active device length. Loss is determined for devices fabricated on waveguide ring resonators by measuring the resonator spectral response, and a sharp decrease in resonator quality factor is observed above 70 °C, consistent with switching of VO2 to its metallic phase. A computational study of device geometry is also presented, and we show that it is possible to more than double the modulation depth with modified device structures.

© 2010 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(160.6840) Materials : Thermo-optical materials
(230.5750) Optical devices : Resonators
(230.7380) Optical devices : Waveguides, channeled
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

Original Manuscript: March 23, 2010
Revised Manuscript: April 29, 2010
Manuscript Accepted: May 4, 2010
Published: May 12, 2010

Ryan M. Briggs, Imogen M. Pryce, and Harry A. Atwater, "Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition," Opt. Express 18, 11192-11201 (2010)

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