High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks

doi:10.1364/OE.18.011242

High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks

Neilanjan Dutta, Janusz A. Murakowski, Shouyuan Shi, and Dennis W. Prather »View Author Affiliations

Optics Express, Vol. 18, Issue 11, pp. 11242-11249 (2010)
http://dx.doi.org/10.1364/OE.18.011242

View Full Text Article

Enhanced HTML Acrobat PDF (1067 KB)

Journal Search
Article Lookup

Article Tools

Citations

Alert me when this article is cited
Export Citation/Save

Abstract
Article Info
References (19)
Cited By
Figures (7)
Metrics
Related Content

Abstract

We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode.

OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(140.3560) Lasers and laser optics : Lasers, ring
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 2, 2010
Revised Manuscript: May 6, 2010
Manuscript Accepted: May 10, 2010
Published: May 12, 2010

Citation
Neilanjan Dutta, Janusz A. Murakowski, Shouyuan Shi, and Dennis W. Prather, "High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks," Opt. Express 18, 11242-11249 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-11-11242

Sort: Author | Year | Journal | Reset

References

T. F. Krauss, P. J. R. Laybourn, and J. S. Roberts, “CW operation of semiconductor ring lasers,” Electron. Lett. 26(25), 2095–2097 (1990). [CrossRef]
M. Sorel, G. Giuliani, A. Scir`e, R. Miglierina, S. Donati, and P. J. R. Laybourn, “Operating regimes of GaAs-AlGaAs semiconductor ring lasers: Experiment and model,” IEEE J. Quantum Electron. 39(10), 1187–1195 (2003). [CrossRef]
M. Sorel, P. J. R. Laybourn, G. Giuliani, and S. Donati, “Unidirectional bistability in semiconductor waveguide ring lasers,” Appl. Phys. Lett. 80(17), 3051–3053 (2002). [CrossRef]
J. P. Hohimer, D. C. Craft, G. R. Hadley, and G. A. Vawter, “CW room temperature operation of y-junction semiconductor ring lasers,” Electron. Lett. 28(4), 374–375 (1992). [CrossRef]
G. Griffel, J. H. Abeles, R. J. Menna, A. M. Braun, J. C. Connolly, and M. King, “Low threshold InGaAsP ring lasers fabricated using bi-level dry etching,” IEEE Photon. Technol. Lett. 12(2), 146–148 (2000). [CrossRef]
J. P. Hohimer and G. A. Vawter, “Unidirectional semiconductor ring laser with racetrack cavities,” Appl. Phys. Lett. 63(18), 2457–2459 (1993). [CrossRef]
S. Oku, M. Okayasu, and M. Ikeda, “Low-threshold operation of square-shaped semiconductor ring lasers (orbiter lasers),” IEEE Photon. Technol. Lett. 3(7), 588–590 (1991). [CrossRef]
H. Han, D. V. Forbes, and J. J. Coleman, “InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers,” IEEE J. Quantum Electron. 31(11), 1994–1997 (1995). [CrossRef]
C. Ji, M. H. Leary, and J. M. Ballantyne, “Long-wavelength triangular ring laser,” IEEE Photon. Technol. Lett. 9(11), 1469–1471 (1997). [CrossRef]
K. K. Lee, D. R. Lim, L. C. Kimerling, J. Shin, and F. Cerrina, “Fabrication of ultralow-loss Si/SiO(2) waveguides by roughness reduction,” Opt. Lett. 26(23), 1888–1890 (2001). [CrossRef]
B. E. Little, J.-P. Laine, and S. T. Chu, “Surface-roughness-induced contradirectional coupling in ring and disk resonators,” Opt. Lett. 22(1), 4–6 (1997). [CrossRef] [PubMed]
T. F. Krauss, R. M. De La Rue, and P. J. R. Laybourn, “Impact of output coupler configuration on operating characteristics of semiconductor ring lasers,” J. Lightwave Technol. 13(7), 1500–1507 (1995). [CrossRef]
R. Roijen, E. C. M. Pennings, M. J. N. van Stalen, T. van Dongen, B. H. Verbeek, and J. M. M. van der Heijden, “Compact InP-based ring lasers employing multi-mode interference couplers and combiners,” Appl. Phys. Lett. 64(14), 1753–1755 (1994). [CrossRef]
C. P. Chao, S. Y. Hu, K.-K. Law, B. Young, J. L. Merz, and A. C. Gossard, “Low-threshold InGaAWGaAs strained layer single quantum well lasers with simple ridge waveguide structure,” J. Appl. Phys. 69(11), 7892–7894 (1991). [CrossRef]
T. F. Krauss, R. M. De La Rue, P. J. R. Laybourn, B. Vogele, and C. R. Stanley, “Efficient semiconductor ring lasers made by a simple self aligned fabrication process,” IEEE J. Sel. Top. Quantum Electron. 1(2), 757–761 (1995). [CrossRef]
H. V. Demir, J.-F. Zheng, V. A. Sabnis, O. Fidaner, J. Hanberg, J. S. Harris, and D. A. B. Miller, “Self-aligning planarization and passivation for integration applications in III-V semiconductor devices,” IEEE Trans. Semicond. Manuf. 18(1), 182–189 (2005). [CrossRef]
M. Haverlag, D. Vender, and G. S. Oehrlein, “Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6,” Appl. Phys. Lett. 61(24), 2875–2877 (1992). [CrossRef]
M. Borselli, T. J. Johnson, and O. Painter, “Beyond the Rayleigh scattering limit in high-Q silicon microdisks: theory and experiment,” Opt. Express 13(5), 1515–1530 (2005). [CrossRef] [PubMed]
M. Sorel, P. J. R. Laybourn, A. Scirè, S. Balle, G. Giuliani, R. Miglierina, and S. Donati, “Alternate oscillations in semiconductor ring lasers,” Opt. Lett. 27(22), 1992–1994 (2002). [CrossRef]

Appl. Phys. Lett.

M. Sorel, P. J. R. Laybourn, G. Giuliani, and S. Donati, “Unidirectional bistability in semiconductor waveguide ring lasers,” Appl. Phys. Lett. 80(17), 3051–3053 (2002). [CrossRef]
J. P. Hohimer and G. A. Vawter, “Unidirectional semiconductor ring laser with racetrack cavities,” Appl. Phys. Lett. 63(18), 2457–2459 (1993). [CrossRef]
R. Roijen, E. C. M. Pennings, M. J. N. van Stalen, T. van Dongen, B. H. Verbeek, and J. M. M. van der Heijden, “Compact InP-based ring lasers employing multi-mode interference couplers and combiners,” Appl. Phys. Lett. 64(14), 1753–1755 (1994). [CrossRef]
M. Haverlag, D. Vender, and G. S. Oehrlein, “Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6,” Appl. Phys. Lett. 61(24), 2875–2877 (1992). [CrossRef]

Electron. Lett.

J. P. Hohimer, D. C. Craft, G. R. Hadley, and G. A. Vawter, “CW room temperature operation of y-junction semiconductor ring lasers,” Electron. Lett. 28(4), 374–375 (1992). [CrossRef]
T. F. Krauss, P. J. R. Laybourn, and J. S. Roberts, “CW operation of semiconductor ring lasers,” Electron. Lett. 26(25), 2095–2097 (1990). [CrossRef]

IEEE J. Quantum Electron.

M. Sorel, G. Giuliani, A. Scir`e, R. Miglierina, S. Donati, and P. J. R. Laybourn, “Operating regimes of GaAs-AlGaAs semiconductor ring lasers: Experiment and model,” IEEE J. Quantum Electron. 39(10), 1187–1195 (2003). [CrossRef]
H. Han, D. V. Forbes, and J. J. Coleman, “InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers,” IEEE J. Quantum Electron. 31(11), 1994–1997 (1995). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

T. F. Krauss, R. M. De La Rue, P. J. R. Laybourn, B. Vogele, and C. R. Stanley, “Efficient semiconductor ring lasers made by a simple self aligned fabrication process,” IEEE J. Sel. Top. Quantum Electron. 1(2), 757–761 (1995). [CrossRef]

IEEE Photon. Technol. Lett.

S. Oku, M. Okayasu, and M. Ikeda, “Low-threshold operation of square-shaped semiconductor ring lasers (orbiter lasers),” IEEE Photon. Technol. Lett. 3(7), 588–590 (1991). [CrossRef]
C. Ji, M. H. Leary, and J. M. Ballantyne, “Long-wavelength triangular ring laser,” IEEE Photon. Technol. Lett. 9(11), 1469–1471 (1997). [CrossRef]
G. Griffel, J. H. Abeles, R. J. Menna, A. M. Braun, J. C. Connolly, and M. King, “Low threshold InGaAsP ring lasers fabricated using bi-level dry etching,” IEEE Photon. Technol. Lett. 12(2), 146–148 (2000). [CrossRef]

IEEE Trans. Semicond. Manuf.

H. V. Demir, J.-F. Zheng, V. A. Sabnis, O. Fidaner, J. Hanberg, J. S. Harris, and D. A. B. Miller, “Self-aligning planarization and passivation for integration applications in III-V semiconductor devices,” IEEE Trans. Semicond. Manuf. 18(1), 182–189 (2005). [CrossRef]

J. Appl. Phys.

C. P. Chao, S. Y. Hu, K.-K. Law, B. Young, J. L. Merz, and A. C. Gossard, “Low-threshold InGaAWGaAs strained layer single quantum well lasers with simple ridge waveguide structure,” J. Appl. Phys. 69(11), 7892–7894 (1991). [CrossRef]

J. Lightwave Technol.

T. F. Krauss, R. M. De La Rue, and P. J. R. Laybourn, “Impact of output coupler configuration on operating characteristics of semiconductor ring lasers,” J. Lightwave Technol. 13(7), 1500–1507 (1995). [CrossRef]

Opt. Express

M. Borselli, T. J. Johnson, and O. Painter, “Beyond the Rayleigh scattering limit in high-Q silicon microdisks: theory and experiment,” Opt. Express 13(5), 1515–1530 (2005). [CrossRef] [PubMed]

Opt. Lett.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Click here to see a list of articles that cite this paper