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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 11 — May. 24, 2010
  • pp: 11242–11249

High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks

Neilanjan Dutta, Janusz A. Murakowski, Shouyuan Shi, and Dennis W. Prather  »View Author Affiliations


Optics Express, Vol. 18, Issue 11, pp. 11242-11249 (2010)
http://dx.doi.org/10.1364/OE.18.011242


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Abstract

We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode.

© 2010 OSA

OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(140.3560) Lasers and laser optics : Lasers, ring
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 2, 2010
Revised Manuscript: May 6, 2010
Manuscript Accepted: May 10, 2010
Published: May 12, 2010

Citation
Neilanjan Dutta, Janusz A. Murakowski, Shouyuan Shi, and Dennis W. Prather, "High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks," Opt. Express 18, 11242-11249 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-11-11242


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