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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 11 — May. 24, 2010
  • pp: 11791–11799

Silicon-based plasmonic waveguides

Alexey V. Krasavin and Anatoly V. Zayats  »View Author Affiliations


Optics Express, Vol. 18, Issue 11, pp. 11791-11799 (2010)
http://dx.doi.org/10.1364/OE.18.011791


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Abstract

We propose and comprehensively investigate Si-based plasmonic waveguides as a means to confine and manipulate photonic signals. The high refractive index of Si assures strong confinement and a very high level of photonic integration with achievable waveguide separations of the order of 10 nm and waveguide bends with 500 nm radius at telecommunication wavelengths, while using Al and Cu plasmonic material platforms, makes such waveguides fully compatible with existing CMOS fabrication processes. Their potential future in hybrid electronic/photonic chips is further reinforced as various configurations have been shown to compensate SPP propagation loss. The group velocity dispersion of such waveguides allows over 10 Tb/s signal transfer rates. The figures of merit allowing comparison of passive and active functionalities achievable with various waveguides have also been introduced.

© 2010 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(250.5403) Optoelectronics : Plasmonics

ToC Category:
Integrated Optics

History
Original Manuscript: March 18, 2010
Revised Manuscript: April 23, 2010
Manuscript Accepted: May 5, 2010
Published: May 19, 2010

Citation
Alexey V. Krasavin and Anatoly V. Zayats, "Silicon-based plasmonic waveguides," Opt. Express 18, 11791-11799 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-11-11791


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