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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 13 — Jun. 21, 2010
  • pp: 13574–13579

InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

Baoquan Yao, Yi Tian, Gang Li, and Yuezhu Wang  »View Author Affiliations


Optics Express, Vol. 18, Issue 13, pp. 13574-13579 (2010)
http://dx.doi.org/10.1364/OE.18.013574


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Abstract

We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm3+ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber’s (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 μJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.

© 2010 OSA

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 15, 2010
Revised Manuscript: June 4, 2010
Manuscript Accepted: June 6, 2010
Published: June 9, 2010

Citation
Baoquan Yao, Yi Tian, Gang Li, and Yuezhu Wang, "InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers," Opt. Express 18, 13574-13579 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-13-13574


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