OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 13 — Jun. 21, 2010
  • pp: 13945–13950

Room-temperature electroluminescence from Si microdisks with Ge quantum dots

Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki  »View Author Affiliations

Optics Express, Vol. 18, Issue 13, pp. 13945-13950 (2010)

View Full Text Article

Enhanced HTML    Acrobat PDF (1276 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(140.3948) Lasers and laser optics : Microcavity devices
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Optical Devices

Original Manuscript: April 7, 2010
Revised Manuscript: May 31, 2010
Manuscript Accepted: June 2, 2010
Published: June 14, 2010

Jinsong Xia, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki, "Room-temperature electroluminescence from Si microdisks with Ge quantum dots," Opt. Express 18, 13945-13950 (2010)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993). [CrossRef]
  2. S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994). [CrossRef]
  3. K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002). [CrossRef]
  4. S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997). [CrossRef]
  5. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
  6. L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003). [CrossRef]
  7. G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994). [CrossRef]
  8. D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003). [CrossRef]
  9. A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).
  10. J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007). [CrossRef] [PubMed]
  11. J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).
  12. “M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004). [CrossRef]
  13. J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007). [CrossRef] [PubMed]
  14. M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008). [CrossRef] [PubMed]
  15. S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992). [CrossRef]
  16. T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited