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All-silicon and in-line integration of variable optical attenuators and photodetectors based on submicrometer rib waveguides |
Optics Express, Vol. 18, Issue 15, pp. 15303-15310 (2010)
http://dx.doi.org/10.1364/OE.18.015303
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Abstract
We demonstrate a monolithic integration of variable optical attenuators (VOAs) and photodetectors (PDs) based on submicrometer silicon (Si) rib waveguide with p-i-n diode structure for near infrared (NIR) light. To make the Si PD absorptive for NIR, we introduced lattice defects at the rib core by means of argon ion implantation. At reverse bias of 5 V, the PD exhibits dark current of ~1 nA, responsivity of ~65 mA/W at 1560-nm wavelength, and a 3-dB cut-off frequency of ~350 MHz, while the VOA shows ~100 MHz. The PD has an absorption coefficient as low as ~0.5 cm−1, which is favorable for an in in-line PD configuration, where the PD absorbs a small portion of the optical power. For DC light, the PD precisely detects the optical power attenuated by the VOA with a detection range of over 40 dB. The 3-dB cut-off frequency of synchronous operation between the VOA and PD is ~50 MHz, which is limited by RF noise originating from the VOA drive current. Putting an isolation groove between the VOA and PD is effective for avoiding performance degradation in DC and RF operation.
© 2010 OSA
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(230.5160) Optical devices : Photodetectors
(230.7370) Optical devices : Waveguides
ToC Category:
Integrated Optics
History
Original Manuscript: April 15, 2010
Manuscript Accepted: April 28, 2010
Published: July 2, 2010
Citation
Sungbong Park, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hidetaka Nishi, Hiroyuki Shinojima, and Sei-ichi Itabashi, "All-silicon and in-line integration of variable optical attenuators and photodetectors based on submicrometer rib waveguides," Opt. Express 18, 15303-15310 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-15-15303
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