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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 15 — Jul. 19, 2010
  • pp: 15440–15447

On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide

Kazuya Ohira, Kentaro Kobayashi, Norio Iizuka, Haruhiko Yoshida, Mizunori Ezaki, Hiroshi Uemura, Akihiro Kojima, Kenro Nakamura, Hideto Furuyama, and Hideki Shibata  »View Author Affiliations


Optics Express, Vol. 18, Issue 15, pp. 15440-15447 (2010)
http://dx.doi.org/10.1364/OE.18.015440


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Abstract

On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.

© 2010 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(200.4650) Optics in computing : Optical interconnects
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optoelectronics

History
Original Manuscript: May 11, 2010
Revised Manuscript: June 24, 2010
Manuscript Accepted: June 24, 2010
Published: July 6, 2010

Citation
Kazuya Ohira, Kentaro Kobayashi, Norio Iizuka, Haruhiko Yoshida, Mizunori Ezaki, Hiroshi Uemura, Akihiro Kojima, Kenro Nakamura, Hideto Furuyama, and Hideki Shibata, "On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide," Opt. Express 18, 15440-15447 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-15-15440


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References

  1. D. A. B. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000). [CrossRef]
  2. M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-chip optical interconnect roadmap: challenges and critical directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006). [CrossRef]
  3. T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. Sel. Top. Quantum Electron. 11(1), 232–240 (2005). [CrossRef]
  4. Y. A. Vlasov and S. J. McNab, “Losses in single-mode silicon-on-insulator strip waveguides and bends,” Opt. Express 12(8), 1622–1631 (2004). [CrossRef] [PubMed]
  5. H. Yoshida, T. Sato, K. Ohira, R. Hashimoto, N. Iizuka, and M. Ezaki, “A novel thin-overcladding spot- size converter for efficient silicon-wire optical interconnections and waveguide circuits,” in Proceedings of 5th IEEE International Conference on Group IV Photonics (Institute of Electrical and Electronics Engineers, New York, 2008), pp. 377–379.
  6. G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit, “Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit,” Opt. Express 14(18), 8154–8159 (2006). [CrossRef] [PubMed]
  7. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
  8. J. V. Campenhout, P. R. Romeo, D. V. Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “Design and optimization of electrically injected InP-based microdisk lasers integrated on and coupled to a SOI waveguide circuit,” IEEE J. Lightwave Technol. 26(1), 52–63 (2008). [CrossRef]
  9. M. Kapulainen, S. Ylinen, T. Aalto, M. Harjanne, K. Solehmainen, J. Ollila, and V. Vilokkinen, “Hybrid integration of InP lasers with SOI waveguides using thermocompression bonding,” in Proceedings of 5th IEEE International Conference on Group IV Photonics (Institute of Electrical and Electronics Engineers, New York, 2008), pp. 61–63.
  10. D. Liang, M. Fiorentino, T. Okumura, H.-H. Chang, D. T. Spencer, Y.-H. Kuo, A. W. Fang, D. Dai, R. G. Beausoleil, and J. E. Bowers, “Electrically-pumped compact hybrid silicon microring lasers for optical interconnects,” Opt. Express 17(22), 20355–20364 (2009). [CrossRef] [PubMed]
  11. H. Park, Y. H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector,” Opt. Express 15(21), 13539–13546 (2007). [CrossRef] [PubMed]
  12. L. Chen, K. Preston, S. Manipatruni, and M. Lipson, “Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors,” Opt. Express 17(17), 15248–15256 (2009). [CrossRef] [PubMed]
  13. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007). [CrossRef] [PubMed]
  14. D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]
  15. S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-Integrated 40GHz Germanium Waveguide Photodetector for On-Chip Optical Interconnects,” in Optical Fiber Communication Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMR4. http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2009-OMR4 .
  16. Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, “High speed hybrid silicon evanescent electroabsorption modulator,” Opt. Express 16(13), 9936–9941 (2008). [CrossRef] [PubMed]
  17. W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express 15(25), 17106–17113 (2007). [CrossRef] [PubMed]
  18. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express 15(2), 430–436 (2007). [CrossRef] [PubMed]
  19. I. Christiaens, G. Roelkens, K. D. Mesel, D. V. Thourhout, and R. Baets, “Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding,” IEEE J. Lightwave Technol. 23(2), 517–523 (2005). [CrossRef]
  20. M. M. R. Howlader, T. Watanabe, and T. Suga, “Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature,” J. Vac. Sci. Technol. B 19(6), 2114–2118 (2001). [CrossRef]

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