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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 15 — Jul. 19, 2010
  • pp: 15585–15590

Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang, S. F. Yu, H. K. Liang, T. P. Chen, J. Gao, and T. Wu  »View Author Affiliations

Optics Express, Vol. 18, Issue 15, pp. 15585-15590 (2010)

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Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3 (In2O3:Sn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed n-In2O3:Sn nanorods onto a p-type 4H-SiC substrate. It is found that the emission intensity of the heterojunction LED under forward bias can be maximized by doping the In2O3 nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ~395 and ~440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optical Devices

Original Manuscript: March 30, 2010
Revised Manuscript: May 25, 2010
Manuscript Accepted: May 26, 2010
Published: July 8, 2010

H. Y. Yang, S. F. Yu, H. K. Liang, T. P. Chen, J. Gao, and T. Wu, "Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction," Opt. Express 18, 15585-15590 (2010)

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