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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 15 — Jul. 19, 2010
  • pp: 15942–15947

Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide / polycrystalline p-Si composite anode

Y. Z. Li, Z. L. Wang, H. Luo, Y. Z. Wang, W. J. Xu, G. Z. Ran, G. G. Qin, W. Q. Zhao, and H. Liu  »View Author Affiliations

Optics Express, Vol. 18, Issue 15, pp. 15942-15947 (2010)

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A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (~10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V2O5/ NPB/ CBP: (ppy)2Ir(acac)/ Bphen/ Bphen: Cs2CO3/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V2O5/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.

© 2010 OSA

OCIS Codes
(160.4890) Materials : Organic materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: May 7, 2010
Revised Manuscript: June 12, 2010
Manuscript Accepted: June 17, 2010
Published: July 13, 2010

Y. Z. Li, Z. L. Wang, H. Luo, Y. Z. Wang, W. J. Xu, G. Z. Ran, G. G. Qin, W. Q. Zhao, and H. Liu, "Highly efficient phosphorescent organic 
light-emitting diode with a nanometer-thick 
Ni silicide / polycrystalline p-Si composite anode," Opt. Express 18, 15942-15947 (2010)

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