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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 15 — Jul. 19, 2010
  • pp: 15956–15963

Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 1.55 µm

Zhenyu Zhao, Andre Schwagmann, Frank Ospald, Daniel C. Driscoll, Hong Lu, Arthur C. Gossard, and Jurgen H. Smet  »View Author Affiliations


Optics Express, Vol. 18, Issue 15, pp. 15956-15963 (2010)
http://dx.doi.org/10.1364/OE.18.015956


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Abstract

We experimentally study the thickness dependence of the terahertz (THz) response in 〈110〉-oriented GaAs crystals for free space electro-optic sampling at 1.55 µm. The THz response bandwidths are analyzed and simulated under phase-matching condition with a model frequency response function. The results indicate that the detection bandwidth increases from 2 THz to 3 THz when the thickness of GaAs is reduced from 2 mm to 1 mm. Below 1 mm, the detected bandwidth is increasingly limited by the emitter characteristics and the finite probe pulse duration. The broadest bandwidth in experiment reaches 3.3 THz when using a 0.2 mm thick crystal, while it exceeds 5 THz in theory. The THz response sensitivity was studied experimentally and modeled taking into account the absorption of the THz radiation in the GaAs crystal. While absorption was found to be negligible for the crystal thickness range studied here, strong saturation is predicted theoretically for crystal thicknesses exceeding 5 mm.

© 2010 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(300.6495) Spectroscopy : Spectroscopy, teraherz
(060.3510) Fiber optics and optical communications : Lasers, fiber

ToC Category:
Spectroscopy

History
Original Manuscript: May 20, 2010
Revised Manuscript: June 28, 2010
Manuscript Accepted: June 28, 2010
Published: July 13, 2010

Citation
Zhenyu Zhao, Andre Schwagmann, Frank Ospald, Daniel C. Driscoll, Hong Lu, Arthur C. Gossard, and Jurgen H. Smet, "Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 1.55 µm," Opt. Express 18, 15956-15963 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-15-15956


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