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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 16 — Aug. 2, 2010
  • pp: 16594–16600

Measuring residual stress of anisotropic thin film by fast Fourier transform

Chuen-Lin Tien and Hung-Da Zeng  »View Author Affiliations

Optics Express, Vol. 18, Issue 16, pp. 16594-16600 (2010)

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A new method for the measurement of anisotropic stress in thin films based on 2-D fast Fourier transform (FFT) is presented. A modified Twyman-Green interferometer was used for surface topography measurement. A fringe normalization technique was also used to improve the phase extraction technique efficiently. The measurement of anisotropic stress in obliquely deposited MgF2 thin film was demonstrated.

© 2010 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(240.0310) Optics at surfaces : Thin films
(310.4925) Thin films : Other properties (stress, chemical, etc.)

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: June 15, 2010
Revised Manuscript: July 15, 2010
Manuscript Accepted: July 16, 2010
Published: July 22, 2010

Chuen-Lin Tien and Hung-Da Zeng, "Measuring residual stress of anisotropic thin film by fast Fourier transform," Opt. Express 18, 16594-16600 (2010)

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