© 2010 OSA

1. M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996). [CrossRef]
2. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004). [CrossRef]
3. A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004). [CrossRef]
4. F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005). [CrossRef]
5. N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005). [CrossRef]
6. A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006). [CrossRef]
7. W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007). [CrossRef]
8. A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010). [CrossRef]
9. A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008). [CrossRef]
10. A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009). [CrossRef]
11. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).
12. S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977). [CrossRef]
13. T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977). [CrossRef]
14. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002). [CrossRef]
15. T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004). [CrossRef]
16. E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005). [CrossRef]
17. A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010). [CrossRef]
18. D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010). [CrossRef] [PubMed]
19. V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007). [CrossRef]
20. E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006). [CrossRef]
21. G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009). [CrossRef] [PubMed]
22. V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008). [CrossRef]
23. E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007). [CrossRef]
24. D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978). [CrossRef]
25. V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003). [CrossRef]
26. Equation (3) is approximately valid also for a bulk substrate of finite thickness with a bevel back surface, in which the interference effects in the substrate are eliminated.
27. E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988). [CrossRef]
28. V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008). [CrossRef] [PubMed]

Appl. Phys. Lett.

• W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004). [CrossRef]
• F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005). [CrossRef]
• A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006). [CrossRef]
• X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002). [CrossRef]
• T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004). [CrossRef]
• E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005). [CrossRef]
• A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010). [CrossRef]
• E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007). [CrossRef]

Electron. Lett.

• A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008). [CrossRef]
• N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005). [CrossRef]

IEEE Photon. Technol. Lett.

• E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006). [CrossRef]

IEEE Trans. Antenn. Propag.

• E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988). [CrossRef]

IEEE Trans. on Electron, Devices

• M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996). [CrossRef]

Int. J. High Speed Electron. Syst.

• V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007). [CrossRef]

J. Appl. Phys.

• V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008). [CrossRef]
• V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003). [CrossRef]
• A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010). [CrossRef]
• A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004). [CrossRef]

J. Infrared Millim. Terahertz Waves

• W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

J. Nanoelectron. Optoelectron.

• W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007). [CrossRef]

J. Phys. Condens. Matter

• G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009). [CrossRef] [PubMed]
• V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008). [CrossRef] [PubMed]

Opt. Commun.

• A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009). [CrossRef]

Opt. Express

• D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010). [CrossRef] [PubMed]

Phys. Rev. Lett.

• S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977). [CrossRef]

Solid State Commun.

• T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977). [CrossRef]

Surf. Sci.

• D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978). [CrossRef]

Other

• Equation (3) is approximately valid also for a bulk substrate of finite thickness with a bevel back surface, in which the interference effects in the substrate are eliminated.

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