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Laser cooling of a semiconductor load to 165 K |
Optics Express, Vol. 18, Issue 17, pp. 18061-18066 (2010)
http://dx.doi.org/10.1364/OE.18.018061
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Abstract
Abstract: We demonstrate cooling of a 2 micron thick GaAs/InGaP double-heterostructure to 165 K from ambient using an all-solid-state optical refrigerator. Cooler is comprised of Yb3+-doped YLF crystal, utilizing 3.5 Watts of absorbed power near the E4-E5 Stark manifold transition.
© 2010 OSA
OCIS Codes
(140.3320) Lasers and laser optics : Laser cooling
(160.5690) Materials : Rare-earth-doped materials
ToC Category:
Atomic and Molecular Physics
History
Original Manuscript: June 28, 2010
Revised Manuscript: August 2, 2010
Manuscript Accepted: August 2, 2010
Published: August 6, 2010
Citation
Denis V. Seletskiy, Seth D. Melgaard, Alberto Di Lieto, Mauro Tonelli, and Mansoor Sheik-Bahae, "Laser cooling of a semiconductor load to 165 K," Opt. Express 18, 18061-18066 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-17-18061
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References
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