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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 17 — Aug. 16, 2010
  • pp: 18339–18346

Thickness and refractive index measurement of a silicon wafer based on an optical comb

Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Tae Bong Eom  »View Author Affiliations

Optics Express, Vol. 18, Issue 17, pp. 18339-18346 (2010)

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We have proposed and demonstrated a novel method that can determine both the geometrical thickness and refractive index of a silicon wafer at the same time using an optical comb. The geometrical thickness and refractive index of a silicon wafer was determined from the optical thickness using phase information obtained in the spectral domain. In a feasibility test, the geometrical thickness and refractive index of a wafer were measured to be 334.85 μm and 3.50, respectively. The measurement uncertainty for the geometrical thickness was evaluated as 0.95 μm (k = 1) using a preliminary setup.

© 2010 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.6200) Instrumentation, measurement, and metrology : Spectrometers and spectroscopic instrumentation
(130.3060) Integrated optics : Infrared
(140.3538) Lasers and laser optics : Lasers, pulsed

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: July 9, 2010
Revised Manuscript: August 2, 2010
Manuscript Accepted: August 2, 2010
Published: August 12, 2010

Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Tae Bong Eom, "Thickness and refractive index measurement of a silicon wafer based on an optical comb," Opt. Express 18, 18339-18346 (2010)

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