Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography

doi:10.1364/OE.18.018383

Laser-induced phase transitions of Ge₂Sb₂Te₅ thin films used in optical and electronic data storage and in thermal lithography

Cheng Hung Chu, Chiun Da Shiue, Hsuen Wei Cheng, Ming Lun Tseng, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai »View Author Affiliations

Optics Express, Vol. 18, Issue 17, pp. 18383-18393 (2010)
http://dx.doi.org/10.1364/OE.18.018383

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Abstract

Amorphous thin films of Ge₂Sb₂Te₅, sputter-deposited on a ZnS-SiO₂ dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge₂Sb₂Te₅ thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.

OCIS Codes
(210.0210) Optical data storage : Optical data storage
(220.0220) Optical design and fabrication : Optical design and fabrication

ToC Category:
Optical Data Storage

History
Original Manuscript: May 6, 2010
Revised Manuscript: June 19, 2010
Manuscript Accepted: August 4, 2010
Published: August 12, 2010

Citation
Cheng Hung Chu, Chiun Da Shiue, Hsuen Wei Cheng, Ming Lun Tseng, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai, "Laser-induced phase transitions of Ge₂Sb₂Te₅ thin films used in optical and electronic data storage and in thermal lithography," Opt. Express 18, 18383-18393 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-17-18383

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References

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Y. Lin, M. H. Hong, T. C. Chong, C. S. Lim, G. X. Chen, L. S. Tan, Z. B. Wang, and L. P. Shi, “Ultrafast-laser-induced parallel phase-change nanolithography,” Appl. Phys. Lett. 89(4), 3 (2006). [CrossRef]
C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb-Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloy. Comp. 488(1), 190–194 (2009). [CrossRef]
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T. Ohta, “Phase-change optical memory promotes the DVD optical disk,” J. Optoelectron. Adv. Mater. 3, 609–626 (2001).
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C. P. Liu, Y. X. Huang, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Nanoscale Fabrication Using Thermal Lithography Technique With Blue Laser,” IEEE Trans. Magn. 45(5), 2206–2208 (2009). [CrossRef]
N. Yamada and T. Matsunaga, “Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory,” J. Appl. Phys. 88(12), 7020–7028 (2000). [CrossRef]
V. Weidenhof, I. Friedrich, S. Ziegler, and M. Wuttig, “Laser induced crystallization of amorphous Ge2Sb2Te5 films,” J. Appl. Phys. 89(6), 3168–3176 (2001). [CrossRef]
C. H. Chu, B. J. Wu, T. S. Kao, Y. H. Fu, H. P. Chiang, and D. P. Tsai, “Imaging of Recording Marks and Their Jitters With Different Writing Strategy and Terminal Resistance of Optical Output,” IEEE Trans. Magn. 45(5), 2221–2223 (2009). [CrossRef]
J. Tominaga, T. Nakano, and N. Atoda, “An approach for recording and readout beyond the diffraction limit with an Sb thin film,” Appl. Phys. Lett. 73(15), 2078–2080 (1998). [CrossRef]
T. Fukaya, D. Buchel, S. Shinbori, J. Tominaga, N. Atoda, D. P. Tsai, and W. C. Lin, “Micro-optical nonlinearity of a silver oxide layer,” J. Appl. Phys. 89(11), 6139–6144 (2001). [CrossRef]
J. Kim, I. Hwang, D. Yoon, I. Park, D. Shin, T. Kikukawa, T. Shima, and J. Tominaga, “Super-resolution by elliptical bubble formation with PtOx and AgInSbTe layers,” Appl. Phys. Lett. 83(9), 1701–1703 (2003). [CrossRef]
W. C. Lin, T. S. Kao, H. H. Chang, Y. H. Lin, Y. H. Fu, C. T. Wu, K. H. Chen, and D. P. Tsai, “Study of a super-resolution optical structure: Polycarbonate/ZnS-SiO2/ZnO/ZnS-SiO2/Ge2Sb2Te5/ZnS-SiO2,” Jpn. J. Appl. Phys. 42(Part 1, No. 2B), 1029–1030 (2003). [CrossRef]
J. W. Fang, C. C. Wu, A. Liao, W. C. Lin, and D. P. Tsai, “Implementation of practical super-resolution near-field structure system using commercial drive,” Jpn. J. Appl. Phys. 45(No. 2B), 1383–1384 (2006). [CrossRef]
T. S. Kao, Y. H. Fu, H. W. Hsu, and D. P. Tsai, “Study of the optical response of phase-change recording layer with zinc oxide nanostructured thin film,” J. Microsc. 229(3), 561–566 (2008). [CrossRef] [PubMed]
K. P. Chiu, K. F. Lai, and D. P. Tsai, “Application of surface polariton coupling between nano recording marks to optical data storage,” Opt. Express 16(18), 13885–13892 (2008). [CrossRef] [PubMed]
V. Weidenhof, I. Friedrich, S. Ziegler, and M. Wuttig, “Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5,” J. Appl. Phys. 86(10), 5879–5887 (1999). [CrossRef]
J. S. Wei, X. B. Jiao, F. X. Gan, and M. F. Xiao, “Laser pulse induced bumps in chalcogenide phase change films,” J. Appl. Phys. 103(12), 5 (2008). [CrossRef]
S. K. Lin, P. L. Yang, I. C. Lin, H. W. Hsu, and D. P. Tsai, “Resolving nano scale recording bits on phase-change rewritable optical disk,” Jpn. J. Appl. Phys. 45(No. 2B), 1431–1434 (2006). [CrossRef]
L. Y. Wang, B. Liu, Z. T. Song, S. L. Feng, Y. H. Xiang, and F. X. Zhang, “Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material,” J. Electrochem. Soc. 157(4), H470–H473 (2010). [CrossRef]
S. K. Lin, I. C. Lin, S. Y. Chen, H. W. Hsu, and D. P. Tsai, “Study of nanoscale recorded marks on phase-change recording layers and the interactions with surroundings,” IEEE Trans. Magn. 43(2), 861–863 (2007). [CrossRef]
D. P. Tsai and W. R. Guo, “Near-field optical recording on the cyanine dye layer of a commercial compact disk-recordable,” J. Vac. Sci. Technol. A-Vac, Surf. Films 15(3), 1442–1445 (1997). [CrossRef]
S. H. Chen, S. P. Hou, J. H. Hsieh, H. K. Chen, and D. P. Tsai, “Writing and erasing efficiency analysis on optical-storage media using scanning surface potential microscopy,” J. Vac. Sci. Technol. A 24(6), 2003–2007 (2006). [CrossRef]

Akahira, N.
Anzai, Y.
Araújo, E. B.
Atoda, N.
Aziz, M. M.
Baesso, M. L.
Bento, A. C.
Benvenuti, A.
Bez, R.
Borg, H. J.
Bruls, D.
Buchel, D.
Bulle, H.
Burr, G. W.
Chang, H. H.
Chen, G. X.
Chen, H. K.
Chen, J. P.
Chen, K. H.
Chen, S. H.
Chen, S. Y.
Chiang, H. P.
Chiu, K. P.
Chong, T. C.
Chu, C. H.
Coombs, J. H.
Dekker, M. J.
El Majdoubi, H.
Elliott, G. R.
Fang, J. W.
Feng, S. L.
Friedrich, I.
Fu, Y. H.
Fukaya, T.
Fukushima, S.
Gan, F. X.
Guo, W. R.
Hamann, H. F.
Hewak, D. W.
Hong, M. H.
Hou, S. P.
Hsieh, J. H.
Hsu, C. C.
Hsu, H. W.
Huang, Y. X.
Hwang, I.
Imai, Y.
Imanaka, R.
Ishibashi, H.
Jacobs, B. A. J.
Jeng, T. R.
Jiao, X. B.
Jongenelis, A. P. J. M.
Kakimoto, Y.
Kao, T. S.
Kasai, T.
Kato, T.
Kikukawa, T.
Kim, J.
Kitagawa, A.
Kitaoka, Y.
Kojima, K.
Kozaki, T.
Krebs, D.
Kuijper, M.
Kumeda, M.
Lacaita, A. L.
Lai, K. F.
Lankhorst, M. H. R.
Liao, A.
Lim, C. S.
Lima, S. M.
Lin, I. C.
Lin, S. K.
Lin, W. C.
Lin, Y.
Lin, Y. H.
Liu, B.
Liu, C. P.
Martin, Y. C.
Matsunaga, T.
Medina, A. N.
Meinders, E. R.
Millet, A.
Minemura, H.
Miyamoto, H.
Moraes, J. C. S.
Murugan, G. S.
Nagata, K.
Nakano, T.
Nakayama, K.
Narumi, K.
Nishiuchi, K.
O’Boyle, M.
Ohno, E.
Ohta, T.
Oliveira, R. C.
Park, I.
Pedrochi, F.
Peeters, P.
Pellizzer, F.
Petrovich, M.
Pirovano, A. L.
Raoux, S.
Rastogi, R.
Rettner, C. T.
Rijpers, J. C. N.
Rooks, M.
Sakai, O. A.
Salinga, M.
Satoh, I.
Shi, L. P.
Shima, T.
Shin, D.
Shinbori, S.
Shintani, T.
Silva, K. C.
Song, Z. T.
Steimacher, A.
Suzuki, M.
Takao, M.
Tan, L. S.
Tanaka, K.
Tominaga, J.
Tsai, D. P.
Ubbens, I. P. D.
Ushiyama, J.
Van der Veer, M.
van Es-Spiekman, W.
van Schijndel, M.
Wang, L. Y.
Wang, Z. B.
Wei, J. S.
Weidenhof, V.
Welnic, W.
Wickramasinghe, H. K.
Wilkinson, J. S.
Wright, C. D.
Wu, B. J.
Wu, C. C.
Wu, C. T.
Wuttig, M.
Xiang, Y. H.
Xiao, M. F.
Yamada, N.
Yang, P. L.
Yoon, D.
Yukimitu, K.
Zhang, F. X.
Zhou, G. F.
Ziegler, S.

Appl. Phys. Lett.

T. Shintani, Y. Anzai, H. Minemura, H. Miyamoto, and J. Ushiyama, “Nanosize fabrication using etching of phase-change recording films,” Appl. Phys. Lett. 85(4), 639–641 (2004). [CrossRef]
Y. Lin, M. H. Hong, T. C. Chong, C. S. Lim, G. X. Chen, L. S. Tan, Z. B. Wang, and L. P. Shi, “Ultrafast-laser-induced parallel phase-change nanolithography,” Appl. Phys. Lett. 89(4), 3 (2006). [CrossRef]
D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, “Threshold field of phase change memory materials measured using phase change bridge devices,” Appl. Phys. Lett. 95(8), 3 (2009). [CrossRef]
J. Tominaga, T. Nakano, and N. Atoda, “An approach for recording and readout beyond the diffraction limit with an Sb thin film,” Appl. Phys. Lett. 73(15), 2078–2080 (1998). [CrossRef]
J. Kim, I. Hwang, D. Yoon, I. Park, D. Shin, T. Kikukawa, T. Shima, and J. Tominaga, “Super-resolution by elliptical bubble formation with PtOx and AgInSbTe layers,” Appl. Phys. Lett. 83(9), 1701–1703 (2003). [CrossRef]

IEEE Trans. Electron. Dev.

A. L. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, “Electronic switching in phase-change memories,” IEEE Trans. Electron. Dev. 51(3), 452–459 (2004). [CrossRef]

IEEE Trans. Magn.

T. Ohta, K. Nagata, I. Satoh, and R. Imanaka, “Overwritable phase-change optical disk recording,” IEEE Trans. Magn. 34(2), 426–431 (1998). [CrossRef]
C. P. Liu, Y. X. Huang, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Nanoscale Fabrication Using Thermal Lithography Technique With Blue Laser,” IEEE Trans. Magn. 45(5), 2206–2208 (2009). [CrossRef]
C. H. Chu, B. J. Wu, T. S. Kao, Y. H. Fu, H. P. Chiang, and D. P. Tsai, “Imaging of Recording Marks and Their Jitters With Different Writing Strategy and Terminal Resistance of Optical Output,” IEEE Trans. Magn. 45(5), 2221–2223 (2009). [CrossRef]
S. K. Lin, I. C. Lin, S. Y. Chen, H. W. Hsu, and D. P. Tsai, “Study of nanoscale recorded marks on phase-change recording layers and the interactions with surroundings,” IEEE Trans. Magn. 43(2), 861–863 (2007). [CrossRef]

J. Alloy. Comp.

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb-Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloy. Comp. 488(1), 190–194 (2009). [CrossRef]

J. Appl. Phys.

N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69(5), 2849–2856 (1991). [CrossRef]
J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, “Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth,” J. Appl. Phys. 78(8), 4906–4917 (1995). [CrossRef]
M. M. Aziz and C. D. Wright, “An analytical model for nanoscale electrothermal probe recording on phase-change media,” J. Appl. Phys. 99(3), 12 (2006). [CrossRef]
K. C. Silva, O. A. Sakai, A. Steimacher, F. Pedrochi, M. L. Baesso, A. C. Bento, A. N. Medina, S. M. Lima, R. C. Oliveira, J. C. S. Moraes, K. Yukimitu, E. B. Araújo, M. Petrovich, and D. W. Hewak, “Temperature and wavelength dependence of the thermo-optical properties of tellurite and chalcogenide glasses,” J. Appl. Phys. 102(7), 073507 (2007). [CrossRef]
V. Weidenhof, I. Friedrich, S. Ziegler, and M. Wuttig, “Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5,” J. Appl. Phys. 86(10), 5879–5887 (1999). [CrossRef]
J. S. Wei, X. B. Jiao, F. X. Gan, and M. F. Xiao, “Laser pulse induced bumps in chalcogenide phase change films,” J. Appl. Phys. 103(12), 5 (2008). [CrossRef]
N. Yamada and T. Matsunaga, “Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory,” J. Appl. Phys. 88(12), 7020–7028 (2000). [CrossRef]
V. Weidenhof, I. Friedrich, S. Ziegler, and M. Wuttig, “Laser induced crystallization of amorphous Ge2Sb2Te5 films,” J. Appl. Phys. 89(6), 3168–3176 (2001). [CrossRef]
T. Fukaya, D. Buchel, S. Shinbori, J. Tominaga, N. Atoda, D. P. Tsai, and W. C. Lin, “Micro-optical nonlinearity of a silver oxide layer,” J. Appl. Phys. 89(11), 6139–6144 (2001). [CrossRef]

J. Electrochem. Soc.

L. Y. Wang, B. Liu, Z. T. Song, S. L. Feng, Y. H. Xiang, and F. X. Zhang, “Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material,” J. Electrochem. Soc. 157(4), H470–H473 (2010). [CrossRef]

J. Microsc.

T. S. Kao, Y. H. Fu, H. W. Hsu, and D. P. Tsai, “Study of the optical response of phase-change recording layer with zinc oxide nanostructured thin film,” J. Microsc. 229(3), 561–566 (2008). [CrossRef] [PubMed]

J. Optoelectron. Adv. Mater.

T. Ohta, “Phase-change optical memory promotes the DVD optical disk,” J. Optoelectron. Adv. Mater. 3, 609–626 (2001).

J. Vac. Sci. Technol. A

S. H. Chen, S. P. Hou, J. H. Hsieh, H. K. Chen, and D. P. Tsai, “Writing and erasing efficiency analysis on optical-storage media using scanning surface potential microscopy,” J. Vac. Sci. Technol. A 24(6), 2003–2007 (2006). [CrossRef]

J. Vac. Sci. Technol. A-Vac, Surf. Films

D. P. Tsai and W. R. Guo, “Near-field optical recording on the cyanine dye layer of a commercial compact disk-recordable,” J. Vac. Sci. Technol. A-Vac, Surf. Films 15(3), 1442–1445 (1997). [CrossRef]

Jpn. J. Appl. Phys.

S. K. Lin, P. L. Yang, I. C. Lin, H. W. Hsu, and D. P. Tsai, “Resolving nano scale recording bits on phase-change rewritable optical disk,” Jpn. J. Appl. Phys. 45(No. 2B), 1431–1434 (2006). [CrossRef]
W. C. Lin, T. S. Kao, H. H. Chang, Y. H. Lin, Y. H. Fu, C. T. Wu, K. H. Chen, and D. P. Tsai, “Study of a super-resolution optical structure: Polycarbonate/ZnS-SiO2/ZnO/ZnS-SiO2/Ge2Sb2Te5/ZnS-SiO2,” Jpn. J. Appl. Phys. 42(Part 1, No. 2B), 1029–1030 (2003). [CrossRef]
J. W. Fang, C. C. Wu, A. Liao, W. C. Lin, and D. P. Tsai, “Implementation of practical super-resolution near-field structure system using commercial drive,” Jpn. J. Appl. Phys. 45(No. 2B), 1383–1384 (2006). [CrossRef]
E. R. Meinders, R. Rastogi, M. Van der Veer, P. Peeters, H. El Majdoubi, H. Bulle, A. Millet, and D. Bruls, “Phase-transition mastering of high-density optical media,” Jpn. J. Appl. Phys. 46(No. 6B), 3987–3992 (2007). [CrossRef]
H. J. Borg, M. van Schijndel, J. C. N. Rijpers, M. H. R. Lankhorst, G. F. Zhou, M. J. Dekker, I. P. D. Ubbens, and M. Kuijper, “Phase-change media for high-numerical-aperture and blue-wavelength recording,” Jpn. J. Appl. Phys. 40(Part 1, No. 3B), 1592–1597 (2001). [CrossRef]
T. Kato and K. Tanaka, “Electronic properties of amorphous and crystalline Ge2Sb2Te5 films,” Jpn. J. Appl. Phys. 44(10), 7340–7344 (2005). [CrossRef]
T. Ohta, K. Nishiuchi, K. Narumi, Y. Kitaoka, H. Ishibashi, N. Yamada, and T. Kozaki, “Overview and the future of phase-change optical disk technology,” Jpn. J. Appl. Phys. 39(Part 1, No. 2B), 770–774 (2000). [CrossRef]
K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, “Nonvolatile memory based on phase change in Se-Sb-Te glass,” Jpn. J. Appl. Phys. 42(Part 1, No. 2A), 404–408 (2003). [CrossRef]

Mater. Today

W. Welnic and M. Wuttig, “Reversible switching in phase-change materials,” Mater. Today 11(6), 20–27 (2008). [CrossRef]

Nat. Mater.

H. F. Hamann, M. O’Boyle, Y. C. Martin, M. Rooks, and H. K. Wickramasinghe, “Ultra-high-density phase-change storage and memory,” Nat. Mater. 5(5), 383–387 (2006). [CrossRef] [PubMed]

Opt. Express

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[1] N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69(5), 2849–2856 (1991). [CrossRef]

[2] J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, “Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth,” J. Appl. Phys. 78(8), 4906–4917 (1995). [CrossRef]

[3] T. Ohta, K. Nishiuchi, K. Narumi, Y. Kitaoka, H. Ishibashi, N. Yamada, and T. Kozaki, “Overview and the future of phase-change optical disk technology,” Jpn. J. Appl. Phys. 39(Part 1, No. 2B), 770–774 (2000). [CrossRef]

[4] K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, “Nonvolatile memory based on phase change in Se-Sb-Te glass,” Jpn. J. Appl. Phys. 42(Part 1, No. 2A), 404–408 (2003). [CrossRef]

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